Heteroepitaxial growth of GeSi alloys on Si (001) under deposition conditions that partially limit surface mobility leads to an unusual form of strain-induced surface morphological evolution. We discuss a kinetic growth regime wherein pits form in a thick metastable wetting layer and, with additional deposition, evolve to a quantum dot molecule-a symmetric assembly of four quantum dots bound by the central pit. We discuss the size selection and scaling of quantum dot molecules. We then examine the key mechanism-preferred pit formation-in detail, using ex situ atomic force microscopy, in situ scanning tunneling microscopy, and kinetic Monte Carlo simulations. A picture emerges wherein localized pits appear to arise from a damped instability. When pits are annealed, they extend into an array of highly anisotropic surface grooves via a one-dimensional growth instability. Subsequent deposition on this grooved film results in a fascinating structure where compact quantum dots and molecules, as well as highly ramified quantum wires, are all simultaneously self-assembled.
|Original language||English (US)|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - Oct 15 2005|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics