Bias-enhanced nucleation of diamond on silicon dioxide

M. D. Irwin, Carlo G. Pantano, P. Gluche, E. Kohn

Research output: Contribution to journalArticlepeer-review

24 Scopus citations

Abstract

The results of surface characterization of bias-pretreated SiO2 using x-ray photoemission spectroscopy and Raman spectroscopy are presented. These results suggest that the formation of SiC on the substrate surface during bias-enhanced nucleation (BEN) facilitates diamond nucleation. Also, it is confirmed that relatively high diamond nucleation densities can be achieved on fused SiO2 by BEN.

Original languageEnglish (US)
Pages (from-to)716-718
Number of pages3
JournalApplied Physics Letters
Volume71
Issue number5
DOIs
StatePublished - Aug 4 1997

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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