The results of surface characterization of bias-pretreated SiO2 using x-ray photoemission spectroscopy and Raman spectroscopy are presented. These results suggest that the formation of SiC on the substrate surface during bias-enhanced nucleation (BEN) facilitates diamond nucleation. Also, it is confirmed that relatively high diamond nucleation densities can be achieved on fused SiO2 by BEN.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)