Bias-enhanced visible-rejection of GaN Schottky barrier ultraviolet photodetectors

Zhenyu Jiang, Wenjun Zhang, Andy Luo, Mahmoud R.M. Atalla, Guanjun You, Xiaoyun Li, Li Wang, Jie Liu, Asim M. Elahi, Lai Wei, Yu Zhang, Jian Xu

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The bias-enhanced performance of visible-blind ultraviolet (UV) detection of GaN Schottky barrier diodes has been studied. The UV response of the Schottky diodes was found to be vastly amplified at elevated reverse bias, leading to the observation of the voltage-dependent gain arising from the defect-induced Schottky barrier lowering effect. In contrast, the visible light response of the GaN Schottky diodes shows insignificant voltage dependence because of the dominance of the internal photoemission absorption. Thus, the visible rejection ratio, defined as the responsivity of UV over visible range, can be greatly enhanced at high operating bias for the UV detectors based on the GaN Schottky barrier diodes. The observation has been supported by both experimental results and simulation data, and has been utilized to minimize the interference between the monolithically integrated GaN photodetectors and power light-emitting diodes (LEDs) in the present study of LED communication.

Original languageEnglish (US)
Article number7031927
Pages (from-to)994-997
Number of pages4
JournalIEEE Photonics Technology Letters
Volume27
Issue number9
DOIs
StatePublished - May 1 2015

Fingerprint

Schottky barrier diodes
Photodetectors
Schottky diodes
rejection
Light emitting diodes
photometers
Diodes
Ultraviolet detectors
Photoemission
Electric potential
light emitting diodes
ultraviolet detectors
Defects
Communication
data simulation
electric potential
photoelectric emission
communication
interference
defects

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

Jiang, Zhenyu ; Zhang, Wenjun ; Luo, Andy ; Atalla, Mahmoud R.M. ; You, Guanjun ; Li, Xiaoyun ; Wang, Li ; Liu, Jie ; Elahi, Asim M. ; Wei, Lai ; Zhang, Yu ; Xu, Jian. / Bias-enhanced visible-rejection of GaN Schottky barrier ultraviolet photodetectors. In: IEEE Photonics Technology Letters. 2015 ; Vol. 27, No. 9. pp. 994-997.
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abstract = "The bias-enhanced performance of visible-blind ultraviolet (UV) detection of GaN Schottky barrier diodes has been studied. The UV response of the Schottky diodes was found to be vastly amplified at elevated reverse bias, leading to the observation of the voltage-dependent gain arising from the defect-induced Schottky barrier lowering effect. In contrast, the visible light response of the GaN Schottky diodes shows insignificant voltage dependence because of the dominance of the internal photoemission absorption. Thus, the visible rejection ratio, defined as the responsivity of UV over visible range, can be greatly enhanced at high operating bias for the UV detectors based on the GaN Schottky barrier diodes. The observation has been supported by both experimental results and simulation data, and has been utilized to minimize the interference between the monolithically integrated GaN photodetectors and power light-emitting diodes (LEDs) in the present study of LED communication.",
author = "Zhenyu Jiang and Wenjun Zhang and Andy Luo and Atalla, {Mahmoud R.M.} and Guanjun You and Xiaoyun Li and Li Wang and Jie Liu and Elahi, {Asim M.} and Lai Wei and Yu Zhang and Jian Xu",
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Jiang, Z, Zhang, W, Luo, A, Atalla, MRM, You, G, Li, X, Wang, L, Liu, J, Elahi, AM, Wei, L, Zhang, Y & Xu, J 2015, 'Bias-enhanced visible-rejection of GaN Schottky barrier ultraviolet photodetectors', IEEE Photonics Technology Letters, vol. 27, no. 9, 7031927, pp. 994-997. https://doi.org/10.1109/LPT.2015.2399302

Bias-enhanced visible-rejection of GaN Schottky barrier ultraviolet photodetectors. / Jiang, Zhenyu; Zhang, Wenjun; Luo, Andy; Atalla, Mahmoud R.M.; You, Guanjun; Li, Xiaoyun; Wang, Li; Liu, Jie; Elahi, Asim M.; Wei, Lai; Zhang, Yu; Xu, Jian.

In: IEEE Photonics Technology Letters, Vol. 27, No. 9, 7031927, 01.05.2015, p. 994-997.

Research output: Contribution to journalArticle

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AU - Jiang, Zhenyu

AU - Zhang, Wenjun

AU - Luo, Andy

AU - Atalla, Mahmoud R.M.

AU - You, Guanjun

AU - Li, Xiaoyun

AU - Wang, Li

AU - Liu, Jie

AU - Elahi, Asim M.

AU - Wei, Lai

AU - Zhang, Yu

AU - Xu, Jian

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AB - The bias-enhanced performance of visible-blind ultraviolet (UV) detection of GaN Schottky barrier diodes has been studied. The UV response of the Schottky diodes was found to be vastly amplified at elevated reverse bias, leading to the observation of the voltage-dependent gain arising from the defect-induced Schottky barrier lowering effect. In contrast, the visible light response of the GaN Schottky diodes shows insignificant voltage dependence because of the dominance of the internal photoemission absorption. Thus, the visible rejection ratio, defined as the responsivity of UV over visible range, can be greatly enhanced at high operating bias for the UV detectors based on the GaN Schottky barrier diodes. The observation has been supported by both experimental results and simulation data, and has been utilized to minimize the interference between the monolithically integrated GaN photodetectors and power light-emitting diodes (LEDs) in the present study of LED communication.

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