Bicrystalline silicon nanowires

A. H. Carim, K. K. Lew, Joan Marie Redwing

Research output: Contribution to journalArticlepeer-review

77 Scopus citations

Abstract

The synthesis of bicrystalline silicon nanowires containing a single (111) twin boundary along the entire length of the [112] growth axis was carried out. The nanowires were grown by a method combining vapor-liquid-solid growth with an anodic alumina membrane as an initial template. The wires are generally straight and do not contain other defects such as twins or stacking faults. These nanowires do not possess small diameters to exhibit quantum confinement effects. The unusual structures offer systems for study of charge and mass transport along single defects and also serve as templates for novel device structures.

Original languageEnglish (US)
Pages (from-to)1489-1491
Number of pages3
JournalAdvanced Materials
Volume13
Issue number19
DOIs
StatePublished - Oct 2 2001

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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