Bismuth pyrochlore thin films for dielectric energy storage

Elizabeth K. Michael, Susan E. Trolier-McKinstry

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Thin films of cubic pyrochlore bismuth zinc niobate, bismuth zinc tantalate, and bismuth zinc niobate tantalate were fabricated using chemical solution deposition. This family of materials exhibited moderate relative permittivities between 55±2 and 145±5 for bismuth zinc tantalate and bismuth zinc niobate, respectively, and low loss tangents on the order of 0.0008±0.0001. Increases in the concentration of the tantalum end member increased the dielectric breakdown strength. For example, at 10kHz, the room temperature breakdown strength of bismuth zinc niobate was 5.1 MV/cm, while that of bismuth zinc tantalate was 6.1 MV/cm. This combination of a high breakdown strength and a moderate permittivity led to a high discharged energy storage density for all film compositions. For example, at a measurement frequency of 10 kHz, bismuth zinc niobate exhibited a maximum recoverable energy storage density of 60.8±2.0J/cm3, while bismuth zinc tantalate exhibited a recoverable energy storage density of 60.7±2.0J/cm3. Intermediate compositions of bismuth zinc niobate tantalate offered higher energy storage densities; at 10 mol. % tantalum, the maximum recoverable energy storage density was ∼66.9±2.4J/cm3.

Original languageEnglish (US)
Article number054101
JournalJournal of Applied Physics
Volume118
Issue number5
DOIs
StatePublished - Aug 7 2015

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energy storage
bismuth
zinc
niobates
thin films
breakdown
tantalum
permittivity
frequency measurement
tangents
room temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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abstract = "Thin films of cubic pyrochlore bismuth zinc niobate, bismuth zinc tantalate, and bismuth zinc niobate tantalate were fabricated using chemical solution deposition. This family of materials exhibited moderate relative permittivities between 55±2 and 145±5 for bismuth zinc tantalate and bismuth zinc niobate, respectively, and low loss tangents on the order of 0.0008±0.0001. Increases in the concentration of the tantalum end member increased the dielectric breakdown strength. For example, at 10kHz, the room temperature breakdown strength of bismuth zinc niobate was 5.1 MV/cm, while that of bismuth zinc tantalate was 6.1 MV/cm. This combination of a high breakdown strength and a moderate permittivity led to a high discharged energy storage density for all film compositions. For example, at a measurement frequency of 10 kHz, bismuth zinc niobate exhibited a maximum recoverable energy storage density of 60.8±2.0J/cm3, while bismuth zinc tantalate exhibited a recoverable energy storage density of 60.7±2.0J/cm3. Intermediate compositions of bismuth zinc niobate tantalate offered higher energy storage densities; at 10 mol. {\%} tantalum, the maximum recoverable energy storage density was ∼66.9±2.4J/cm3.",
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Bismuth pyrochlore thin films for dielectric energy storage. / Michael, Elizabeth K.; Trolier-McKinstry, Susan E.

In: Journal of Applied Physics, Vol. 118, No. 5, 054101, 07.08.2015.

Research output: Contribution to journalArticle

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