Blistering and splitting in hydrogen-implanted silicon

E. Ntsoenzok, H. Assaf, S Ashok

Research output: Contribution to journalConference article

4 Citations (Scopus)

Abstract

We implanted hydrogen in silicon with energies ranging from 500 keV to 2 MeV for implant depths varying from 6.1 to 48.4 μn according to TRIM (transport of ions in matter) 2003. After implantation, a 600 °C thermal annealing was applied to all samples. It is found that for depths lower than 9 μm there is no lift-off of a free-standing silicon layer; only a blistering phenomenon is seen. Increase in the implanted dose or thermal budget does not improve the situation. However, for depths ≥ 9 μm (9 - 50 μm in this study) thermal annealing results in effective detachment of ultra-thin free-standing layers. This technique hence provides high quality thin Si layers for semiconductor technology.

Original languageEnglish (US)
Article numberE9.8
Pages (from-to)405-409
Number of pages5
JournalMaterials Research Society Symposium Proceedings
Volume864
StatePublished - Dec 1 2005
Event2005 materials Research Society Spring Meeting - San Francisco, CA, United States
Duration: Mar 28 2005Apr 1 2005

Fingerprint

Silicon
Hydrogen
silicon
hydrogen
Annealing
annealing
detachment
Ion implantation
budgets
implantation
Ions
Semiconductor materials
dosage
Hot Temperature
ions
energy

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Ntsoenzok, E., Assaf, H., & Ashok, S. (2005). Blistering and splitting in hydrogen-implanted silicon. Materials Research Society Symposium Proceedings, 864, 405-409. [E9.8].
Ntsoenzok, E. ; Assaf, H. ; Ashok, S. / Blistering and splitting in hydrogen-implanted silicon. In: Materials Research Society Symposium Proceedings. 2005 ; Vol. 864. pp. 405-409.
@article{46959e098ac44828bc3c246b2b35863b,
title = "Blistering and splitting in hydrogen-implanted silicon",
abstract = "We implanted hydrogen in silicon with energies ranging from 500 keV to 2 MeV for implant depths varying from 6.1 to 48.4 μn according to TRIM (transport of ions in matter) 2003. After implantation, a 600 °C thermal annealing was applied to all samples. It is found that for depths lower than 9 μm there is no lift-off of a free-standing silicon layer; only a blistering phenomenon is seen. Increase in the implanted dose or thermal budget does not improve the situation. However, for depths ≥ 9 μm (9 - 50 μm in this study) thermal annealing results in effective detachment of ultra-thin free-standing layers. This technique hence provides high quality thin Si layers for semiconductor technology.",
author = "E. Ntsoenzok and H. Assaf and S Ashok",
year = "2005",
month = "12",
day = "1",
language = "English (US)",
volume = "864",
pages = "405--409",
journal = "Materials Research Society Symposium - Proceedings",
issn = "0272-9172",
publisher = "Materials Research Society",

}

Ntsoenzok, E, Assaf, H & Ashok, S 2005, 'Blistering and splitting in hydrogen-implanted silicon', Materials Research Society Symposium Proceedings, vol. 864, E9.8, pp. 405-409.

Blistering and splitting in hydrogen-implanted silicon. / Ntsoenzok, E.; Assaf, H.; Ashok, S.

In: Materials Research Society Symposium Proceedings, Vol. 864, E9.8, 01.12.2005, p. 405-409.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Blistering and splitting in hydrogen-implanted silicon

AU - Ntsoenzok, E.

AU - Assaf, H.

AU - Ashok, S

PY - 2005/12/1

Y1 - 2005/12/1

N2 - We implanted hydrogen in silicon with energies ranging from 500 keV to 2 MeV for implant depths varying from 6.1 to 48.4 μn according to TRIM (transport of ions in matter) 2003. After implantation, a 600 °C thermal annealing was applied to all samples. It is found that for depths lower than 9 μm there is no lift-off of a free-standing silicon layer; only a blistering phenomenon is seen. Increase in the implanted dose or thermal budget does not improve the situation. However, for depths ≥ 9 μm (9 - 50 μm in this study) thermal annealing results in effective detachment of ultra-thin free-standing layers. This technique hence provides high quality thin Si layers for semiconductor technology.

AB - We implanted hydrogen in silicon with energies ranging from 500 keV to 2 MeV for implant depths varying from 6.1 to 48.4 μn according to TRIM (transport of ions in matter) 2003. After implantation, a 600 °C thermal annealing was applied to all samples. It is found that for depths lower than 9 μm there is no lift-off of a free-standing silicon layer; only a blistering phenomenon is seen. Increase in the implanted dose or thermal budget does not improve the situation. However, for depths ≥ 9 μm (9 - 50 μm in this study) thermal annealing results in effective detachment of ultra-thin free-standing layers. This technique hence provides high quality thin Si layers for semiconductor technology.

UR - http://www.scopus.com/inward/record.url?scp=30544438065&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=30544438065&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:30544438065

VL - 864

SP - 405

EP - 409

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

M1 - E9.8

ER -