Blistering and splitting in hydrogen-implanted silicon

E. Ntsoenzok, H. Assaf, S. Ashok

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations

Abstract

We implanted hydrogen in silicon with energies ranging from 500 keV to 2 MeV for implant depths varying from 6.1 to 48.4 μn according to TRIM (transport of ions in matter) 2003. After implantation, a 600 °C thermal annealing was applied to all samples. It is found that for depths lower than 9 μm there is no lift-off of a free-standing silicon layer; only a blistering phenomenon is seen. Increase in the implanted dose or thermal budget does not improve the situation. However, for depths ≥ 9 μm (9 - 50 μm in this study) thermal annealing results in effective detachment of ultra-thin free-standing layers. This technique hence provides high quality thin Si layers for semiconductor technology.

Original languageEnglish (US)
Article numberE9.8
Pages (from-to)405-409
Number of pages5
JournalMaterials Research Society Symposium Proceedings
Volume864
DOIs
StatePublished - 2005
Event2005 materials Research Society Spring Meeting - San Francisco, CA, United States
Duration: Mar 28 2005Apr 1 2005

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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