Boron-doped plasma enhanced chemical vapor deposition of ZnO thin films

Jie Sun, Devin A. Mourey, Diwakar Garg, Thomas N. Jackson

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5 Scopus citations

Abstract

Highly conducting boron-doped ZnO thin films have been grown at low temperature (200°C) by plasma enhanced chemical vapor deposition using diethyl zinc [Zn (C2 H5) 2], carbon dioxide (CO2), triethylboron, and argon gas mixtures. The minimum resistivity is <4× 10-4 cm with an excellent optical transmission (>85% for the visible spectrum). The free-electron concentration, determined by Hall effect measurement, was as high as 1× 1021 / cm3 with a mobility of 13.5 cm2 /V s. For this deposition approach, the low-reactivity oxidant CO2 allows a uniform film growth over a large area, and the low-toxicity triethylboron allows a simple and convenient boron doping.

Original languageEnglish (US)
Pages (from-to)D47-D49
JournalElectrochemical and Solid-State Letters
Volume11
Issue number5
DOIs
StatePublished - Mar 24 2008

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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