Boron-doped plasma enhanced chemical vapor deposition of ZnO thin films

Jie Sun, Devin A. Mourey, Diwakar Garg, Thomas Nelson Jackson

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Highly conducting boron-doped ZnO thin films have been grown at low temperature (200°C) by plasma enhanced chemical vapor deposition using diethyl zinc [Zn (C2 H5) 2], carbon dioxide (CO2), triethylboron, and argon gas mixtures. The minimum resistivity is <4× 10-4 cm with an excellent optical transmission (>85% for the visible spectrum). The free-electron concentration, determined by Hall effect measurement, was as high as 1× 1021 / cm3 with a mobility of 13.5 cm2 /V s. For this deposition approach, the low-reactivity oxidant CO2 allows a uniform film growth over a large area, and the low-toxicity triethylboron allows a simple and convenient boron doping.

Original languageEnglish (US)
JournalElectrochemical and Solid-State Letters
Volume11
Issue number5
DOIs
StatePublished - Mar 24 2008

Fingerprint

Boron
Plasma enhanced chemical vapor deposition
boron
vapor deposition
Thin films
Argon
Hall effect
Film growth
thin films
visible spectrum
Oxidants
Carbon Dioxide
Gas mixtures
toxicity
free electrons
gas mixtures
Toxicity
carbon dioxide
Zinc
Carbon dioxide

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

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Boron-doped plasma enhanced chemical vapor deposition of ZnO thin films. / Sun, Jie; Mourey, Devin A.; Garg, Diwakar; Jackson, Thomas Nelson.

In: Electrochemical and Solid-State Letters, Vol. 11, No. 5, 24.03.2008.

Research output: Contribution to journalArticle

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