Abstract
Alleviating transient enhanced diffusion (TED) is one among several issues that has to be solved to realize deep sub-micron CMOS. In this paper we present the influence of hydrogen plasma on TED of boron, along with deep level transient spectroscopic (DLTS) studies on defect evolution as a function of anneal temperature. The studies reveal that TED monotonically increases as a function of anneal temperature up to 650°C, where maximum TED occurs. Further increase in anneal temperature reveals TED reduction. The DLTS reveals a corresponding increase in defect density up to 650°C and then decreases when annealed at 850°C for the same amount of time.
Original language | English (US) |
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Pages (from-to) | B5.7.1-B5.7.6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 610 |
DOIs | |
State | Published - Jan 1 2000 |
Event | Si Front-end Processing -Physics and Technology of Dopant-Defect Interactions II - San Francisco, CA, United States Duration: Apr 24 2000 → Apr 27 2000 |
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering