Boron implantation into silicon subject to hydrogen plasma

S. Rangan; M. Horn; S. Ashok

doi:10.1557/proc-610-b5.7

Boron implantation into silicon subject to hydrogen plasma

S. Rangan, M. Horn, S. Ashok

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

Alleviating transient enhanced diffusion (TED) is one among several issues that has to be solved to realize deep sub-micron CMOS. In this paper we present the influence of hydrogen plasma on TED of boron, along with deep level transient spectroscopic (DLTS) studies on defect evolution as a function of anneal temperature. The studies reveal that TED monotonically increases as a function of anneal temperature up to 650°C, where maximum TED occurs. Further increase in anneal temperature reveals TED reduction. The DLTS reveals a corresponding increase in defect density up to 650°C and then decreases when annealed at 850°C for the same amount of time.

Original language	English (US)
Pages (from-to)	B5.7.1-B5.7.6
Journal	Materials Research Society Symposium - Proceedings
Volume	610
DOIs	https://doi.org/10.1557/proc-610-b5.7
State	Published - Jan 1 2000
Event	Si Front-end Processing -Physics and Technology of Dopant-Defect Interactions II - San Francisco, CA, United States Duration: Apr 24 2000 → Apr 27 2000

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Boron implantation into silicon subject to hydrogen plasma",

abstract = "Alleviating transient enhanced diffusion (TED) is one among several issues that has to be solved to realize deep sub-micron CMOS. In this paper we present the influence of hydrogen plasma on TED of boron, along with deep level transient spectroscopic (DLTS) studies on defect evolution as a function of anneal temperature. The studies reveal that TED monotonically increases as a function of anneal temperature up to 650°C, where maximum TED occurs. Further increase in anneal temperature reveals TED reduction. The DLTS reveals a corresponding increase in defect density up to 650°C and then decreases when annealed at 850°C for the same amount of time.",

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doi = "10.1557/proc-610-b5.7",

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note = "Si Front-end Processing -Physics and Technology of Dopant-Defect Interactions II ; Conference date: 24-04-2000 Through 27-04-2000",

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TY - JOUR

T1 - Boron implantation into silicon subject to hydrogen plasma

AU - Rangan, S.

AU - Horn, M.

AU - Ashok, S.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - Alleviating transient enhanced diffusion (TED) is one among several issues that has to be solved to realize deep sub-micron CMOS. In this paper we present the influence of hydrogen plasma on TED of boron, along with deep level transient spectroscopic (DLTS) studies on defect evolution as a function of anneal temperature. The studies reveal that TED monotonically increases as a function of anneal temperature up to 650°C, where maximum TED occurs. Further increase in anneal temperature reveals TED reduction. The DLTS reveals a corresponding increase in defect density up to 650°C and then decreases when annealed at 850°C for the same amount of time.

AB - Alleviating transient enhanced diffusion (TED) is one among several issues that has to be solved to realize deep sub-micron CMOS. In this paper we present the influence of hydrogen plasma on TED of boron, along with deep level transient spectroscopic (DLTS) studies on defect evolution as a function of anneal temperature. The studies reveal that TED monotonically increases as a function of anneal temperature up to 650°C, where maximum TED occurs. Further increase in anneal temperature reveals TED reduction. The DLTS reveals a corresponding increase in defect density up to 650°C and then decreases when annealed at 850°C for the same amount of time.

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DO - 10.1557/proc-610-b5.7

M3 - Conference article

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VL - 610

SP - B5.7.1-B5.7.6

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

T2 - Si Front-end Processing -Physics and Technology of Dopant-Defect Interactions II

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