Boron implantation into silicon subject to hydrogen plasma

S. Rangan, M. Horn, S. Ashok

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations

Abstract

Alleviating transient enhanced diffusion (TED) is one among several issues that has to be solved to realize deep sub-micron CMOS. In this paper we present the influence of hydrogen plasma on TED of boron, along with deep level transient spectroscopic (DLTS) studies on defect evolution as a function of anneal temperature. The studies reveal that TED monotonically increases as a function of anneal temperature up to 650°C, where maximum TED occurs. Further increase in anneal temperature reveals TED reduction. The DLTS reveals a corresponding increase in defect density up to 650°C and then decreases when annealed at 850°C for the same amount of time.

Original languageEnglish (US)
Pages (from-to)B5.7.1-B5.7.6
JournalMaterials Research Society Symposium - Proceedings
Volume610
DOIs
StatePublished - Jan 1 2000
EventSi Front-end Processing -Physics and Technology of Dopant-Defect Interactions II - San Francisco, CA, United States
Duration: Apr 24 2000Apr 27 2000

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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