Boron, nitrogen and phosphorous substitutionally doped single-wall carbon nanotubes studied by resonance Raman spectroscopy

I. O. Maciel, J. Campos-Delgado, M. A. Pimenta, M. Terrones, H. Terrones, A. M. Rao, A. Jorio

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Substitutional doping on single-wall an on multi-wall carbon nanotubes is possible by adding new atoms during the growing process. In this work we analyze the changes in the Raman spectra of SWNT samples substitutionaly doped with boron, nitrogen, and phosphorous. We find that small amounts of dopants are not enough to change the frequency of the tangential G mode, but there is a doping-dependent shift in ωG when the P-doped SWNTs are measured at high laser power, indicating that doping can change the thermal properties of SWNT bundles. This result seems to hold also for B-doped samples, but not for N-doped SWNTs, showing a different behavior for donors (P- and N- doping). The ID/IG ratio analysis to provide information about the doping level in theSWNTsamples is also discussed.

Original languageEnglish (US)
Pages (from-to)2432-2435
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume246
Issue number11-12
DOIs
StatePublished - Dec 1 2009

Fingerprint

Carbon Nanotubes
Boron
Raman spectroscopy
Carbon nanotubes
boron
Nitrogen
carbon nanotubes
Doping (additives)
nitrogen
high power lasers
High power lasers
bundles
thermodynamic properties
Raman scattering
Raman spectra
Thermodynamic properties
shift
Atoms
atoms

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Maciel, I. O. ; Campos-Delgado, J. ; Pimenta, M. A. ; Terrones, M. ; Terrones, H. ; Rao, A. M. ; Jorio, A. / Boron, nitrogen and phosphorous substitutionally doped single-wall carbon nanotubes studied by resonance Raman spectroscopy. In: Physica Status Solidi (B) Basic Research. 2009 ; Vol. 246, No. 11-12. pp. 2432-2435.
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Boron, nitrogen and phosphorous substitutionally doped single-wall carbon nanotubes studied by resonance Raman spectroscopy. / Maciel, I. O.; Campos-Delgado, J.; Pimenta, M. A.; Terrones, M.; Terrones, H.; Rao, A. M.; Jorio, A.

In: Physica Status Solidi (B) Basic Research, Vol. 246, No. 11-12, 01.12.2009, p. 2432-2435.

Research output: Contribution to journalArticle

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T1 - Boron, nitrogen and phosphorous substitutionally doped single-wall carbon nanotubes studied by resonance Raman spectroscopy

AU - Maciel, I. O.

AU - Campos-Delgado, J.

AU - Pimenta, M. A.

AU - Terrones, M.

AU - Terrones, H.

AU - Rao, A. M.

AU - Jorio, A.

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AB - Substitutional doping on single-wall an on multi-wall carbon nanotubes is possible by adding new atoms during the growing process. In this work we analyze the changes in the Raman spectra of SWNT samples substitutionaly doped with boron, nitrogen, and phosphorous. We find that small amounts of dopants are not enough to change the frequency of the tangential G mode, but there is a doping-dependent shift in ωG when the P-doped SWNTs are measured at high laser power, indicating that doping can change the thermal properties of SWNT bundles. This result seems to hold also for B-doped samples, but not for N-doped SWNTs, showing a different behavior for donors (P- and N- doping). The ID/IG ratio analysis to provide information about the doping level in theSWNTsamples is also discussed.

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