The effect of silicon surface fluorination on the gate oxide breakdown characteristics was studied using three different breakdown measurement techniques: ramped voltage, constant voltage, and constant current. The ramped voltage breakdown measurement did not detect physically meaningful changes in the oxide properties from surface fluorination. The constant voltage and constant current breakdown measurements, however, detected subtle differences in the oxide dielectric integrity, seen as a degradation for the fluorinated samples.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry