Breakdown in the metal/high-k gate stack: Identifying the "weak link" in the multilayer dielectric

G. Bersuker, D. Heh, C. Young, H. Park, P. Khanal, L. Larcher, A. Padovani, Patrick M. Lenahan, J. Ryan, B. H. Lee, H. Tseng, R. Jammy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

59 Scopus citations

Abstract

We apply a systematic approach to identify a high- k/metal gate stack degradation mechanism. Our results demonstrate that the SiO 2 interfacial layer controls the overall degradation and breakdown of the high-k gate stacks stressed in inversion. Defects contributing to the gate stack degradation are associated with the high-k/metal-induced oxygen vacancies in the interfacial layer.

Original languageEnglish (US)
Title of host publication2008 IEEE International Electron Devices Meeting, IEDM 2008
DOIs
StatePublished - Dec 1 2008
Event2008 IEEE International Electron Devices Meeting, IEDM 2008 - San Francisco, CA, United States
Duration: Dec 15 2008Dec 17 2008

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2008 IEEE International Electron Devices Meeting, IEDM 2008
CountryUnited States
CitySan Francisco, CA
Period12/15/0812/17/08

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Bersuker, G., Heh, D., Young, C., Park, H., Khanal, P., Larcher, L., Padovani, A., Lenahan, P. M., Ryan, J., Lee, B. H., Tseng, H., & Jammy, R. (2008). Breakdown in the metal/high-k gate stack: Identifying the "weak link" in the multilayer dielectric. In 2008 IEEE International Electron Devices Meeting, IEDM 2008 [4796816] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2008.4796816