We present evidence supporting the designation of the bridging nitrogen center as the dominant electron trap in NH3-nitrided and reoxidized nitrided oxide dielectric films. This defect, an unpaired electron highly localized in a nearly pure 2p-orbital of a nitrogen atom bonded two silicon atoms, is also present in many other silicon oxynitride dielectrics. We provide evidence suggesting the precursor is of the form (≡Si)2NH.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry