Bridging nitrogen dangling bond centers and electron trapping in amorphous NH3-nitrided and reoxidized nitrided oxide films

J. T. Yount, P. M. Lenahan

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

We present evidence supporting the designation of the bridging nitrogen center as the dominant electron trap in NH3-nitrided and reoxidized nitrided oxide dielectric films. This defect, an unpaired electron highly localized in a nearly pure 2p-orbital of a nitrogen atom bonded two silicon atoms, is also present in many other silicon oxynitride dielectrics. We provide evidence suggesting the precursor is of the form (≡Si)2NH.

Original languageEnglish (US)
Pages (from-to)1069-1072
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume164-166
Issue numberPART 2
DOIs
StatePublished - Dec 2 1993

Fingerprint

Dangling bonds
Silicon
Oxide films
oxide films
Nitrogen
trapping
nitrogen
Atoms
Electron traps
Dielectric films
Electrons
oxynitrides
silicon
nitrogen atoms
electrons
traps
orbitals
Defects
oxides
defects

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

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Bridging nitrogen dangling bond centers and electron trapping in amorphous NH3-nitrided and reoxidized nitrided oxide films. / Yount, J. T.; Lenahan, P. M.

In: Journal of Non-Crystalline Solids, Vol. 164-166, No. PART 2, 02.12.1993, p. 1069-1072.

Research output: Contribution to journalArticle

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