Bridging nitrogen dangling bond centers and electron trapping in amorphous NH3-nitrided and reoxidized nitrided oxide films

J. T. Yount, P. M. Lenahan

Research output: Contribution to journalArticle

24 Scopus citations

Abstract

We present evidence supporting the designation of the bridging nitrogen center as the dominant electron trap in NH3-nitrided and reoxidized nitrided oxide dielectric films. This defect, an unpaired electron highly localized in a nearly pure 2p-orbital of a nitrogen atom bonded two silicon atoms, is also present in many other silicon oxynitride dielectrics. We provide evidence suggesting the precursor is of the form (≡Si)2NH.

Original languageEnglish (US)
Pages (from-to)1069-1072
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume164-166
Issue numberPART 2
DOIs
StatePublished - Dec 2 1993

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

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