Bridging the length scales between lithographic patterning and self assembly mechanisms in fabrication of semiconductor nanostructure arrays

R. Hull, J. A. Floro, M. Gherasimova, J. F. Graham, J. L. Gray, A. Portavoce, F. M. Ross, J. Thorp

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

We employ focused ion beam patterning of single crystal Si(100) surfaces to template the assembly of Ge(Si) nanostructure arrays. The evolution and final structures of the templated arrays are determined by combinations of transmission electron, low energy electron microscope, focused ion beam and scanning probe microscopies. It is shown how the positions of individual nanostructures may be controlled to the order of 10 nm. However, to achieve controlled spacings between elements that are in the 10 nm range requires careful matching of the characteristic lengths scales of self assembly mechanisms to the length scales of the external lithographic "forcing functions".

Original languageEnglish (US)
Article number012003
JournalJournal of Physics: Conference Series
Volume209
DOIs
StatePublished - 2010

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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