C-axis oriented epitaxial BaTiO 3 films on (001) Si

V. Vaithyanathan, J. Lettieri, W. Tian, A. Sharan, A. Vasudevarao, Y. L. Li, A. Kochhar, H. Ma, J. Levy, P. Zschack, J. C. Woicik, Long-qing Chen, Venkatraman Gopalan, D. G. Schlom

Research output: Contribution to journalArticle

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Abstract

c-axis oriented epitaxial films of the ferroelectric BaTiO 3 have been grown on (001) Si by reactive molecular-beam epitaxy. The orientation relationship between the film and substrate is (001) BaTiO 3 |(001) Si and [100] BaTiO 3∥[110] Si. The uniqueness of this integration is that the entire epitaxial BaTiO 3 film on (001) Si is c-axis oriented, unlike any reported so far in the literature. The thermal expansion incompatibility between BaTiO 3 and silicon is overcome by introducing a relaxed buffer layer of Ba xSr 1-xTiO 3 between the BaTiO 3 film and silicon substrate. The rocking curve widths of the BaTiO 3 films are as narrow as 0.4°. X-ray diffraction and second harmonic generation experiments reveal the out-of-plane c-axis orientation of the epitaxial BaTiO 3 film. Piezoresponse atomic force microscopy is used to write ferroelectric domains with a spatial resolution of ∼ 100 nm, corroborating the orientation of the ferroelectric film.

Original languageEnglish (US)
Article number024108
JournalJournal of Applied Physics
Volume100
Issue number2
DOIs
StatePublished - Aug 11 2006

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incompatibility
silicon
uniqueness
thermal expansion
harmonic generations
molecular beam epitaxy
buffers
spatial resolution
atomic force microscopy
curves
diffraction
x rays

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Vaithyanathan, V., Lettieri, J., Tian, W., Sharan, A., Vasudevarao, A., Li, Y. L., ... Schlom, D. G. (2006). C-axis oriented epitaxial BaTiO 3 films on (001) Si. Journal of Applied Physics, 100(2), [024108]. https://doi.org/10.1063/1.2203208
Vaithyanathan, V. ; Lettieri, J. ; Tian, W. ; Sharan, A. ; Vasudevarao, A. ; Li, Y. L. ; Kochhar, A. ; Ma, H. ; Levy, J. ; Zschack, P. ; Woicik, J. C. ; Chen, Long-qing ; Gopalan, Venkatraman ; Schlom, D. G. / C-axis oriented epitaxial BaTiO 3 films on (001) Si. In: Journal of Applied Physics. 2006 ; Vol. 100, No. 2.
@article{b272070860db4eb7935459774e1a4623,
title = "C-axis oriented epitaxial BaTiO 3 films on (001) Si",
abstract = "c-axis oriented epitaxial films of the ferroelectric BaTiO 3 have been grown on (001) Si by reactive molecular-beam epitaxy. The orientation relationship between the film and substrate is (001) BaTiO 3 |(001) Si and [100] BaTiO 3∥[110] Si. The uniqueness of this integration is that the entire epitaxial BaTiO 3 film on (001) Si is c-axis oriented, unlike any reported so far in the literature. The thermal expansion incompatibility between BaTiO 3 and silicon is overcome by introducing a relaxed buffer layer of Ba xSr 1-xTiO 3 between the BaTiO 3 film and silicon substrate. The rocking curve widths of the BaTiO 3 films are as narrow as 0.4°. X-ray diffraction and second harmonic generation experiments reveal the out-of-plane c-axis orientation of the epitaxial BaTiO 3 film. Piezoresponse atomic force microscopy is used to write ferroelectric domains with a spatial resolution of ∼ 100 nm, corroborating the orientation of the ferroelectric film.",
author = "V. Vaithyanathan and J. Lettieri and W. Tian and A. Sharan and A. Vasudevarao and Li, {Y. L.} and A. Kochhar and H. Ma and J. Levy and P. Zschack and Woicik, {J. C.} and Long-qing Chen and Venkatraman Gopalan and Schlom, {D. G.}",
year = "2006",
month = "8",
day = "11",
doi = "10.1063/1.2203208",
language = "English (US)",
volume = "100",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "2",

}

Vaithyanathan, V, Lettieri, J, Tian, W, Sharan, A, Vasudevarao, A, Li, YL, Kochhar, A, Ma, H, Levy, J, Zschack, P, Woicik, JC, Chen, L, Gopalan, V & Schlom, DG 2006, 'C-axis oriented epitaxial BaTiO 3 films on (001) Si', Journal of Applied Physics, vol. 100, no. 2, 024108. https://doi.org/10.1063/1.2203208

C-axis oriented epitaxial BaTiO 3 films on (001) Si. / Vaithyanathan, V.; Lettieri, J.; Tian, W.; Sharan, A.; Vasudevarao, A.; Li, Y. L.; Kochhar, A.; Ma, H.; Levy, J.; Zschack, P.; Woicik, J. C.; Chen, Long-qing; Gopalan, Venkatraman; Schlom, D. G.

In: Journal of Applied Physics, Vol. 100, No. 2, 024108, 11.08.2006.

Research output: Contribution to journalArticle

TY - JOUR

T1 - C-axis oriented epitaxial BaTiO 3 films on (001) Si

AU - Vaithyanathan, V.

AU - Lettieri, J.

AU - Tian, W.

AU - Sharan, A.

AU - Vasudevarao, A.

AU - Li, Y. L.

AU - Kochhar, A.

AU - Ma, H.

AU - Levy, J.

AU - Zschack, P.

AU - Woicik, J. C.

AU - Chen, Long-qing

AU - Gopalan, Venkatraman

AU - Schlom, D. G.

PY - 2006/8/11

Y1 - 2006/8/11

N2 - c-axis oriented epitaxial films of the ferroelectric BaTiO 3 have been grown on (001) Si by reactive molecular-beam epitaxy. The orientation relationship between the film and substrate is (001) BaTiO 3 |(001) Si and [100] BaTiO 3∥[110] Si. The uniqueness of this integration is that the entire epitaxial BaTiO 3 film on (001) Si is c-axis oriented, unlike any reported so far in the literature. The thermal expansion incompatibility between BaTiO 3 and silicon is overcome by introducing a relaxed buffer layer of Ba xSr 1-xTiO 3 between the BaTiO 3 film and silicon substrate. The rocking curve widths of the BaTiO 3 films are as narrow as 0.4°. X-ray diffraction and second harmonic generation experiments reveal the out-of-plane c-axis orientation of the epitaxial BaTiO 3 film. Piezoresponse atomic force microscopy is used to write ferroelectric domains with a spatial resolution of ∼ 100 nm, corroborating the orientation of the ferroelectric film.

AB - c-axis oriented epitaxial films of the ferroelectric BaTiO 3 have been grown on (001) Si by reactive molecular-beam epitaxy. The orientation relationship between the film and substrate is (001) BaTiO 3 |(001) Si and [100] BaTiO 3∥[110] Si. The uniqueness of this integration is that the entire epitaxial BaTiO 3 film on (001) Si is c-axis oriented, unlike any reported so far in the literature. The thermal expansion incompatibility between BaTiO 3 and silicon is overcome by introducing a relaxed buffer layer of Ba xSr 1-xTiO 3 between the BaTiO 3 film and silicon substrate. The rocking curve widths of the BaTiO 3 films are as narrow as 0.4°. X-ray diffraction and second harmonic generation experiments reveal the out-of-plane c-axis orientation of the epitaxial BaTiO 3 film. Piezoresponse atomic force microscopy is used to write ferroelectric domains with a spatial resolution of ∼ 100 nm, corroborating the orientation of the ferroelectric film.

UR - http://www.scopus.com/inward/record.url?scp=33746842197&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33746842197&partnerID=8YFLogxK

U2 - 10.1063/1.2203208

DO - 10.1063/1.2203208

M3 - Article

VL - 100

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 2

M1 - 024108

ER -

Vaithyanathan V, Lettieri J, Tian W, Sharan A, Vasudevarao A, Li YL et al. C-axis oriented epitaxial BaTiO 3 films on (001) Si. Journal of Applied Physics. 2006 Aug 11;100(2). 024108. https://doi.org/10.1063/1.2203208