Calculated strain energy of hexagonal epitaxial thin films

Jianyun Shen, Steven Johnston, Shunli Shang, Timothy Anderson

Research output: Contribution to journalArticle

31 Scopus citations

Abstract

Generalized formulae for the strain energy of hexagonal thin films on both hexagonal and rhombohedral substrates have been developed. These formulae require knowledge of the elastic stiffness coefficients and the lattice parameters of the film and only the lattice parameters of the substrate. Example calculations of the strain energy present in the strained film-substrate material combinations GaN/Al2O3 and GaN/LiGaO2 are presented for different film crystallographic directions and rotation with respect to the substrate. Finally, phase equilibrium calculations are performed for the Ga-N binary system which show the substantial influence of strain energy on equilibrium in the system.

Original languageEnglish (US)
Pages (from-to)6-13
Number of pages8
JournalJournal of Crystal Growth
Volume240
Issue number1-2
DOIs
StatePublished - Apr 1 2002

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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