Capacitance-voltage characterization of AlN/GaN metal-insulator-semiconductor structures grown on sapphire substrate by metalorganic chemical vapor deposition

Tamotsu Hashizume, Egor Alekseev, Dimitris Pavlidis, Karim S. Boutros, Joan Redwing

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96 Scopus citations

Abstract

Electrical characterization of AlN/GaN interfaces was carried out by the capacitance-voltage (C-V) technique in materials grown by metalorganic chemical vapor deposition. The high-frequency C-V characteristics showed clear deep-depletion behavior at room temperature, and the doping density derived from the slope of 1/C2 plots under the deep depletion condition agreed well with the growth design parameters. A low value of interface state density Dit of 1 × 1011 cm-2eV-1 or less around the energy position of Ec-0.8 eV was demonstrated, in agreement with an average Dit value estimated from photoassisted C-V characteristics.

Original languageEnglish (US)
Pages (from-to)1983-1986
Number of pages4
JournalJournal of Applied Physics
Volume88
Issue number4
DOIs
StatePublished - Aug 15 2000

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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