Electrical characterization of AlN/GaN interfaces was carried out by the capacitance-voltage (C-V) technique in materials grown by metalorganic chemical vapor deposition. The high-frequency C-V characteristics showed clear deep-depletion behavior at room temperature, and the doping density derived from the slope of 1/C2 plots under the deep depletion condition agreed well with the growth design parameters. A low value of interface state density Dit of 1 × 1011 cm-2eV-1 or less around the energy position of Ec-0.8 eV was demonstrated, in agreement with an average Dit value estimated from photoassisted C-V characteristics.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)