The effects of annealing on Ga1-xMnxAs epilayers that are capped by a thin layer of GaAs were studied. It was found that the presence of the capping layer significantly suppresses TC in the as-grown samples and also reduces the physical changes induced by annealing. The effect on annealing increased with the capping layer thickness, and a 10 monolayer (ML) cap almost completely eliminated the effects of annealing.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)