Carrier dynamics at deep traps in ion implanted silicon: Possible signature of defect clusters

Samarendra P. Singh, Y. N. Mohapatra, Sanjay Rangan, S. Ashok

Research output: Contribution to journalConference article

Abstract

We report a systematic search for electrical signature of defect clusters in ion-implanted silicon using Deep Level Transient Spectroscopy (DLTS) and related capacitance transient measurements. We show that slow carrier capture dynamics among energy broadened multiple states and occurrence of capture induced metastable states are some of the distinctive hall marks of cluster related trap levels. Isothermal transient spectroscopy is shown to be appropriate for recognition of these features.

Original languageEnglish (US)
Pages (from-to)1025-1029
Number of pages5
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4746 II
StatePublished - Jan 1 2002
EventPhysics of Semiconductor Devices - Delhi, India
Duration: Dec 11 2001Dec 15 2001

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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