Carrier dynamics in Si nanowires fabricated by metal-assisted chemical etching

Hao Tang, Li Guo Zhu, Liang Zhao, Xuejin Zhang, Jie Shan, Shuit Tong Lee

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Silicon nanowire arrays fabricated by metal-assisted wet chemical etching have emerged as a promising architecture for solar energy harvesting applications. Here we investigate the dynamics and transport properties of photoexcited carriers in nanowires derived from an intrinsic silicon wafer using the terahertz (THz) time-domain spectroscopy. Both the dynamics and the pump fluence dependence of the photoinduced complex conductivity spectra up to several THz were measured. The photoinduced conductivity spectra follow a Lorentz dependence, arising from surface plasmon resonances in nanowires. The carrier lifetime was observed to approach 0.7 ns, which is limited primarily by surface trapping. The intrinsic carrier mobility was found to be ∼1000 cm 2 /(V·s). Compared to other silicon nanostructures, these relative high values observed for both the carrier lifetime and mobility are the consequences of high crystallinity and surface quality of the nanowires fabricated by the metal-assisted wet chemical etching method.

Original languageEnglish (US)
Pages (from-to)7814-7819
Number of pages6
JournalACS Nano
Volume6
Issue number9
DOIs
StatePublished - Sep 25 2012

Fingerprint

Nanowires
Etching
nanowires
Metals
etching
Carrier lifetime
Wet etching
Carrier mobility
Silicon
carrier lifetime
carrier mobility
metals
silicon
conductivity
Energy harvesting
solar energy
Surface plasmon resonance
Silicon wafers
surface plasmon resonance
Transport properties

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Tang, H., Zhu, L. G., Zhao, L., Zhang, X., Shan, J., & Lee, S. T. (2012). Carrier dynamics in Si nanowires fabricated by metal-assisted chemical etching. ACS Nano, 6(9), 7814-7819. https://doi.org/10.1021/nn301891s
Tang, Hao ; Zhu, Li Guo ; Zhao, Liang ; Zhang, Xuejin ; Shan, Jie ; Lee, Shuit Tong. / Carrier dynamics in Si nanowires fabricated by metal-assisted chemical etching. In: ACS Nano. 2012 ; Vol. 6, No. 9. pp. 7814-7819.
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Tang, H, Zhu, LG, Zhao, L, Zhang, X, Shan, J & Lee, ST 2012, 'Carrier dynamics in Si nanowires fabricated by metal-assisted chemical etching', ACS Nano, vol. 6, no. 9, pp. 7814-7819. https://doi.org/10.1021/nn301891s

Carrier dynamics in Si nanowires fabricated by metal-assisted chemical etching. / Tang, Hao; Zhu, Li Guo; Zhao, Liang; Zhang, Xuejin; Shan, Jie; Lee, Shuit Tong.

In: ACS Nano, Vol. 6, No. 9, 25.09.2012, p. 7814-7819.

Research output: Contribution to journalArticle

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Tang H, Zhu LG, Zhao L, Zhang X, Shan J, Lee ST. Carrier dynamics in Si nanowires fabricated by metal-assisted chemical etching. ACS Nano. 2012 Sep 25;6(9):7814-7819. https://doi.org/10.1021/nn301891s