We report luminescence from intra-configurational f-f transitions of Tb3+ in GaN powders and thin films deposited on sapphire substrates using metal organic vapor phase epitaxy (MOVPE) and pulsed laser deposition (PLD). The MOVPE film was grown using the precursor tris(2,2,6,6-tetramethyl-3, 5-heptanedionato)terbium, while the PLD films were prepared from powder samples of GaN:Tb3+ prepared by a solution approach. All films yielded transitions of Tb3+ originating from the 5D4 state of Tb3+ to the 7F5 level as well as near bandgap emission (NBE) under cathodoluminescence (CL) excitation. The same transitions were also observed in the source powder of the PLD films, with the exceptions of the NBE at 370 nm. This indicates that the films contain lower defect level than the powders, which improves the quality of the material.