Characterisation of the SilSpin etch-back process for nanolithography with CHF3 and O2 gas chemistry

Hector Carrion-Gonzalez, Michael A. Rogosky, Harriet Black Nembhard, Sanjay Joshi, Jeffrey M. Catchmark

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

This study characterises the SilSpin™ etch-back process within the reverse tone Step and Flash Imprint Lithography (SFIL/R). Currently, the S-FIL/R operational specifications to etch the SilSpin material require a reactive ion etching platform which etches the polymers at a slower rate than a high density plasma reactor. The goal was to develop empirical etch models and determine the process parameters in the etching process using a magnetically enhanced reactive ion etching reactor with CHF3 and O2 gas chemistry. The experimental approach taken uses a 24 factorial design to characterise the relationships between the process factors and etch responses. The factors in the design are: reactor pressure, power, gas flow and magnetic flux. The factors and their interaction levels to uniformly etch the SilSpin were determined along with the best set of operating parameters. Using these results in conjunction with response surface methodology enabled the development of empirical etch behaviour models.

Original languageEnglish (US)
Pages (from-to)305-318
Number of pages14
JournalInternational Journal of Nanomanufacturing
Volume2
Issue number4
DOIs
StatePublished - 2008

All Science Journal Classification (ASJC) codes

  • Industrial and Manufacturing Engineering

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