Characteristics of Hf(Si,O) gate dielectrics as a function of HF content

K. Chang, Jeffrey Shallenberger, F. M. Chang, K. Shanmugasundaram, P. Roman, P. Mumbauer, Jerzy Ruzyllo

Research output: Contribution to conferencePaperpeer-review

2 Scopus citations

Abstract

In this experiment the effect of Hf content on the properties of Hf(Si,O) MOS gate dielectrics is investigated. Change of Hf content in the film is accomplished by varying Hf:Si mixing ratio in liquid precursor used for mist deposition of Hf(Si,O) films. Dielectric constant k increases as the Si content in the film decreases. Advantages of using nonstoichiometric HfSiO x featuring 3:1 Hf:Si ratio in terms of reduced EOT were observed. On the other hand, ternary compositions of HfSiO x did show inferior resistance to charge trapping as compared to HfO 2.

Original languageEnglish (US)
Pages404-410
Number of pages7
StatePublished - Dec 1 2005
Event207th ECS Meeting - Quebec, Canada
Duration: May 16 2005May 20 2005

Other

Other207th ECS Meeting
CountryCanada
CityQuebec
Period5/16/055/20/05

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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