Characteristics of P-channel GaN MOSFET up to 300 °c

Sang Woo Han, Jianan Song, Rongming Chu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

GaN-based semiconductor technology has been successfully developed as next-generation semiconductor technology. However, the p-channel GaN device transistors still exhibit lower performance than the N-channel GaN transistors due to the difficulty in p-type doping and the low hole mobility. Some studies are being conducted to improve the performance of P-channel GaN transistors. Most of the work in this area utilized a two-dimensional hole (2DHG) channel generated in a heterojunction such as AlGaN/GaN [1] or InGaN/GaN [2].

Original languageEnglish (US)
Title of host publication2019 Device Research Conference, DRC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages147-148
Number of pages2
ISBN (Electronic)9781728121123
DOIs
StatePublished - Jun 2019
Event2019 Device Research Conference, DRC 2019 - Ann Arbor, United States
Duration: Jun 23 2019Jun 26 2019

Publication series

NameDevice Research Conference - Conference Digest, DRC
Volume2019-June
ISSN (Print)1548-3770

Conference

Conference2019 Device Research Conference, DRC 2019
CountryUnited States
CityAnn Arbor
Period6/23/196/26/19

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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  • Cite this

    Han, S. W., Song, J., & Chu, R. (2019). Characteristics of P-channel GaN MOSFET up to 300 °c. In 2019 Device Research Conference, DRC 2019 (pp. 147-148). [9046423] (Device Research Conference - Conference Digest, DRC; Vol. 2019-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC46940.2019.9046423