Characterization and modeling of atomically sharp "perfect" Si:Ge/SiO2 interfaces

W. Windl, Tao Liang, S. Lopatin, G. Duscher

Research output: Contribution to journalConference article

1 Scopus citations

Abstract

Using ab-initio calculations and atomic-resolution Z-contrast imaging and electron energy-loss spectroscopy, we show that oxidation of a germanium-implanted Si surface can produce an atomically-sharp interface with a band structure that seems to be more favorable for use in electronic devices than the usually diffuse interface in Si/SiO2. Furthermore, we propose an ab-initio based Monte-Carlo model to simulate oxidation of SiGe alloys to better understand the formation of the sharp interface. copyright The Electrochemical Society.

Original languageEnglish (US)
Pages (from-to)539-549
Number of pages11
JournalECS Transactions
Volume3
Issue number7
DOIs
Publication statusPublished - Dec 1 2006
EventSiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting - Cancun, Mexico
Duration: Oct 29 2006Nov 3 2006

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

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