Using ab-initio calculations and atomic-resolution Z-contrast imaging and electron energy-loss spectroscopy, we show that oxidation of a germanium-implanted Si surface can produce an atomically-sharp interface with a band structure that seems to be more favorable for use in electronic devices than the usually diffuse interface in Si/SiO2. Furthermore, we propose an ab-initio based Monte-Carlo model to simulate oxidation of SiGe alloys to better understand the formation of the sharp interface. copyright The Electrochemical Society.
|Original language||English (US)|
|Number of pages||11|
|Publication status||Published - Dec 1 2006|
|Event||SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting - Cancun, Mexico|
Duration: Oct 29 2006 → Nov 3 2006
All Science Journal Classification (ASJC) codes