Characterization and modeling of metal-insulator transition (MIT) based tunnel junctions

E. Freeman, A. Kar, N. Shukla, R. Misra, R. Engel-Herbert, D. Schlom, V. Gopalan, K. Rabe, S. Datta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Scopus citations

Abstract

Continued physical scaling will reduce power dissipation primarily through the reduction in device capacitance; however, a far greater benefit would result if the CMOS FET could be replaced by a fundamentally new device scheme that operates under very low supply voltages. Recently, semiconductor based inter-band tunnel field effect transistors (TFET) have been explored due to their potential to achieve sub k BT/q steep switching swings, enabling low voltage operation [1]. In this work, we explore the abrupt metal to insulator transition (MIT) of vanadium dioxide (VO 2) based tunnel junction - a first step towards a correlated electron based steep switching TFET. As illustrated in Fig.1 the metal insulator transition MIT in materials with strong electron correlation can be utilized to modulate the tunnelling current by opening an energy gap around the Fermi level in the OFF-state, and a metal-insulator-metal tunnelling current by collapsing the gap in the ON-state.

Original languageEnglish (US)
Title of host publication70th Device Research Conference, DRC 2012 - Conference Digest
Pages243-244
Number of pages2
DOIs
StatePublished - Oct 5 2012
Event70th Device Research Conference, DRC 2012 - University Park, PA, United States
Duration: Jun 18 2012Jun 20 2012

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

Other70th Device Research Conference, DRC 2012
CountryUnited States
CityUniversity Park, PA
Period6/18/126/20/12

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Characterization and modeling of metal-insulator transition (MIT) based tunnel junctions'. Together they form a unique fingerprint.

  • Cite this

    Freeman, E., Kar, A., Shukla, N., Misra, R., Engel-Herbert, R., Schlom, D., Gopalan, V., Rabe, K., & Datta, S. (2012). Characterization and modeling of metal-insulator transition (MIT) based tunnel junctions. In 70th Device Research Conference, DRC 2012 - Conference Digest (pp. 243-244). [6257012] (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2012.6257012