TY - JOUR
T1 - Characterization and modeling of run-time techniques for leakage power reduction
AU - Tsai, Yuh Fang
AU - Duarte, David E.
AU - Vijaykrishnan, N.
AU - Irwin, Mary Jane
N1 - Funding Information:
Manuscript received November 3, 2003; revised May 26, 2004. This work was supported in part by MARCO/Defense Advanced Research Projects Agency (DARPA) GSRC Grant, National Science Foundation (NSF) under NSF 0093085, NSF 0130143, and NSF 0202007.
PY - 2004/11
Y1 - 2004/11
N2 - While some leakage power reduction techniques require modification of the process technology, others are based on circuit-level optimizations and are applied at run-time. We focus our study on the latter and compare three techniques: input vector control, body bias control, and power supply gating. We determine their limits and benefits in terms of the potential leakage reduction, performance penalty, and area and power overhead. The leakage power savings trends considering technology scaling are also presented. Due to the differences in the properties of datapath logic and memory structures, different implementations are recommended. Finally, the use of the "minimum idle time" parameter, as a metric for evaluating different leakage control mechanisms, is showed.
AB - While some leakage power reduction techniques require modification of the process technology, others are based on circuit-level optimizations and are applied at run-time. We focus our study on the latter and compare three techniques: input vector control, body bias control, and power supply gating. We determine their limits and benefits in terms of the potential leakage reduction, performance penalty, and area and power overhead. The leakage power savings trends considering technology scaling are also presented. Due to the differences in the properties of datapath logic and memory structures, different implementations are recommended. Finally, the use of the "minimum idle time" parameter, as a metric for evaluating different leakage control mechanisms, is showed.
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U2 - 10.1109/TVLSI.2004.836315
DO - 10.1109/TVLSI.2004.836315
M3 - Article
AN - SCOPUS:9244264947
SN - 1063-8210
VL - 12
SP - 1221
EP - 1232
JO - IEEE Transactions on Very Large Scale Integration (VLSI) Systems
JF - IEEE Transactions on Very Large Scale Integration (VLSI) Systems
IS - 11
ER -