Characterization of conductive oxides on silicon using non-contact surface charge profiling

P. Roman, D. O. Lee, M. Brubaker, E. Kamieniecki, J. Ruzyllo

Research output: Contribution to journalConference articlepeer-review


The density of charge associated with the silicon-oxide structure remains a figure of merit for the process as well as an indicator of the eventual MOS device performance. As the effective oxide thickness drops below 2 nm significant currents limit the effectiveness of oxide charge determination from C-V measurements. One potential solution is the SPV-based SCP (Surface Charge Profiler) method which allows measurement of total oxide/interfacial charge without making a contact to the oxide. In this paper the effectiveness of the SCP in measuring charges in ultra-thin thermal SiO2 and conductive Ta2O5 films is evaluated.

Original languageEnglish (US)
Pages (from-to)181-184
Number of pages4
JournalMicroelectronic Engineering
Issue number1
StatePublished - Sep 1999
EventProceedings of the 1999 11th Biennial Conference on Insulating Films on Semiconductors (INFOS'99) - Kloster Banz, Ger
Duration: Jun 16 1999Jun 19 1999

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


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