Characterization of ferroelectric property of c-axis- and non-c-axis-oriented epitaxially grown Bi2VO5.5 thin films

Shashank Priya, Dwight Viehland, Jungho Ryu, Kenji Uchino, Yohachi Yamashita, Haosu Luo

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Epitaxial Bi2VO5.5 films with c-axis- and non-c-axis-orientations were grown by metalorganic chemical vapor deposition. (001)-, (114)- and (102)-oriented Bi2VO5.5 films were epitaxialy grown on (100), (110) and (111)SrTiO3 substrates respectively. Electrical properties of the (001)- and (114)-oriented films on (100)SrRuO3 ∥ (100)SrTiO3 and (110)SrRuO3 ∥ (110)SrTiO3 substrates were compared. The dielectric constant (εr) of the (001)-oriented film was smaller than that of the (114)-oriented one, suggesting that εr along the c-axis is smaller than that along other axes. Leakage current density of the (001)-oriented film was smaller than that of the (114)-oriented one. These results were in good agreement with those of the crystallographically equivalent oriented films of SrBi2Ta2O9 and Bi4Ti3O12. Ferroelectricity and domain structure were observed for both films by Polarization-Electric field measurements and scanning nonlinear dielectric microscopy, respectively. However, the large difference of remanent polarization depending on the film orientation observed for SrBi2Ta2O9 and Bi4Ti3O12 films was not observed for Bi2VO5.5 films.

Original languageEnglish (US)
Pages (from-to)6481-6486
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume40
Issue number11
StatePublished - Nov 1 2001

Fingerprint

Ferroelectric materials
Thin films
thin films
Electric field measurement
Ferroelectricity
Remanence
Epitaxial films
Metallorganic chemical vapor deposition
Substrates
ferroelectricity
Leakage currents
polarization
Microscopic examination
Electric properties
metalorganic chemical vapor deposition
Permittivity
Current density
leakage
Polarization
Scanning

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

@article{897b28d33c034fefbd58df6f6b93e9c7,
title = "Characterization of ferroelectric property of c-axis- and non-c-axis-oriented epitaxially grown Bi2VO5.5 thin films",
abstract = "Epitaxial Bi2VO5.5 films with c-axis- and non-c-axis-orientations were grown by metalorganic chemical vapor deposition. (001)-, (114)- and (102)-oriented Bi2VO5.5 films were epitaxialy grown on (100), (110) and (111)SrTiO3 substrates respectively. Electrical properties of the (001)- and (114)-oriented films on (100)SrRuO3 ∥ (100)SrTiO3 and (110)SrRuO3 ∥ (110)SrTiO3 substrates were compared. The dielectric constant (εr) of the (001)-oriented film was smaller than that of the (114)-oriented one, suggesting that εr along the c-axis is smaller than that along other axes. Leakage current density of the (001)-oriented film was smaller than that of the (114)-oriented one. These results were in good agreement with those of the crystallographically equivalent oriented films of SrBi2Ta2O9 and Bi4Ti3O12. Ferroelectricity and domain structure were observed for both films by Polarization-Electric field measurements and scanning nonlinear dielectric microscopy, respectively. However, the large difference of remanent polarization depending on the film orientation observed for SrBi2Ta2O9 and Bi4Ti3O12 films was not observed for Bi2VO5.5 films.",
author = "Shashank Priya and Dwight Viehland and Jungho Ryu and Kenji Uchino and Yohachi Yamashita and Haosu Luo",
year = "2001",
month = "11",
day = "1",
language = "English (US)",
volume = "40",
pages = "6481--6486",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "11",

}

Characterization of ferroelectric property of c-axis- and non-c-axis-oriented epitaxially grown Bi2VO5.5 thin films. / Priya, Shashank; Viehland, Dwight; Ryu, Jungho; Uchino, Kenji; Yamashita, Yohachi; Luo, Haosu.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 40, No. 11, 01.11.2001, p. 6481-6486.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Characterization of ferroelectric property of c-axis- and non-c-axis-oriented epitaxially grown Bi2VO5.5 thin films

AU - Priya, Shashank

AU - Viehland, Dwight

AU - Ryu, Jungho

AU - Uchino, Kenji

AU - Yamashita, Yohachi

AU - Luo, Haosu

PY - 2001/11/1

Y1 - 2001/11/1

N2 - Epitaxial Bi2VO5.5 films with c-axis- and non-c-axis-orientations were grown by metalorganic chemical vapor deposition. (001)-, (114)- and (102)-oriented Bi2VO5.5 films were epitaxialy grown on (100), (110) and (111)SrTiO3 substrates respectively. Electrical properties of the (001)- and (114)-oriented films on (100)SrRuO3 ∥ (100)SrTiO3 and (110)SrRuO3 ∥ (110)SrTiO3 substrates were compared. The dielectric constant (εr) of the (001)-oriented film was smaller than that of the (114)-oriented one, suggesting that εr along the c-axis is smaller than that along other axes. Leakage current density of the (001)-oriented film was smaller than that of the (114)-oriented one. These results were in good agreement with those of the crystallographically equivalent oriented films of SrBi2Ta2O9 and Bi4Ti3O12. Ferroelectricity and domain structure were observed for both films by Polarization-Electric field measurements and scanning nonlinear dielectric microscopy, respectively. However, the large difference of remanent polarization depending on the film orientation observed for SrBi2Ta2O9 and Bi4Ti3O12 films was not observed for Bi2VO5.5 films.

AB - Epitaxial Bi2VO5.5 films with c-axis- and non-c-axis-orientations were grown by metalorganic chemical vapor deposition. (001)-, (114)- and (102)-oriented Bi2VO5.5 films were epitaxialy grown on (100), (110) and (111)SrTiO3 substrates respectively. Electrical properties of the (001)- and (114)-oriented films on (100)SrRuO3 ∥ (100)SrTiO3 and (110)SrRuO3 ∥ (110)SrTiO3 substrates were compared. The dielectric constant (εr) of the (001)-oriented film was smaller than that of the (114)-oriented one, suggesting that εr along the c-axis is smaller than that along other axes. Leakage current density of the (001)-oriented film was smaller than that of the (114)-oriented one. These results were in good agreement with those of the crystallographically equivalent oriented films of SrBi2Ta2O9 and Bi4Ti3O12. Ferroelectricity and domain structure were observed for both films by Polarization-Electric field measurements and scanning nonlinear dielectric microscopy, respectively. However, the large difference of remanent polarization depending on the film orientation observed for SrBi2Ta2O9 and Bi4Ti3O12 films was not observed for Bi2VO5.5 films.

UR - http://www.scopus.com/inward/record.url?scp=0036150559&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036150559&partnerID=8YFLogxK

M3 - Article

VL - 40

SP - 6481

EP - 6486

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 11

ER -