Characterization of ferroelectric property of c-axis- and non-c-axis-oriented epitaxially grown Bi2VO5.5 thin films

Shashank Priya, Dwight Viehland, Jungho Ryu, Kenji Uchino, Yohachi Yamashita, Haosu Luo

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

Epitaxial Bi2VO5.5 films with c-axis- and non-c-axis-orientations were grown by metalorganic chemical vapor deposition. (001)-, (114)- and (102)-oriented Bi2VO5.5 films were epitaxialy grown on (100), (110) and (111)SrTiO3 substrates respectively. Electrical properties of the (001)- and (114)-oriented films on (100)SrRuO3 ∥ (100)SrTiO3 and (110)SrRuO3 ∥ (110)SrTiO3 substrates were compared. The dielectric constant (εr) of the (001)-oriented film was smaller than that of the (114)-oriented one, suggesting that εr along the c-axis is smaller than that along other axes. Leakage current density of the (001)-oriented film was smaller than that of the (114)-oriented one. These results were in good agreement with those of the crystallographically equivalent oriented films of SrBi2Ta2O9 and Bi4Ti3O12. Ferroelectricity and domain structure were observed for both films by Polarization-Electric field measurements and scanning nonlinear dielectric microscopy, respectively. However, the large difference of remanent polarization depending on the film orientation observed for SrBi2Ta2O9 and Bi4Ti3O12 films was not observed for Bi2VO5.5 films.

Original languageEnglish (US)
Pages (from-to)6481-6486
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume40
Issue number11
StatePublished - Nov 1 2001

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Characterization of ferroelectric property of c-axis- and non-c-axis-oriented epitaxially grown Bi<sub>2</sub>VO<sub>5.5</sub> thin films'. Together they form a unique fingerprint.

Cite this