Characterization of Mn-modified Pb (Mg13 Nb23)O 3 -PbZrO3 -PbTiO3 single crystals for high power broad bandwidth transducers

Shujun Zhang; Sung Min Lee; Dong Ho Kim; Ho Yong Lee; Thomas R. Shrout

doi:10.1063/1.2992081

Characterization of Mn-modified Pb (Mg₁₃ Nb₂₃)O ₃ -PbZrO₃ -PbTiO₃ single crystals for high power broad bandwidth transducers

Shujun Zhang, Sung Min Lee, Dong Ho Kim, Ho Yong Lee, Thomas R. Shrout

Materials Research Institute (MRI)

Research output: Contribution to journal › Article › peer-review

105 Scopus citations

Abstract

The effect of MnO₂ addition on the dielectric and piezoelectric properties of 0.4Pb (Mg₁₃ Nb₂₃) O₃ -0.25PbZr O₃ -0.35PbTi O₃ single crystals was investigated. Analogous to acceptor doping in "hard" Pb (Zr,Ti) O₃ based polycrystalline materials, the Mn doped crystals exhibited enhanced mechanical Q (∼1050) with low dielectric loss (∼0.2%), while maintaining ultrahigh electromechanical coupling k₃₃ >90%, inherent in domain engineered single crystals. The effect of acceptor doping was also evident in the build-up of an internal bias (Ei ∼1.6 kVcm), shown by a horizontal offset in the polarization-field behavior. Together with the relatively high usage temperature (TR-T ∼140 °C), the Mn doped crystals are promising candidates for high power and broad bandwidth transducers.

Original language	English (US)
Article number	122908
Journal	Applied Physics Letters
Volume	93
Issue number	12
DOIs	https://doi.org/10.1063/1.2992081
State	Published - 2008

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2992081

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@article{0526c659974e4071bf49138e297f2f62,

title = "Characterization of Mn-modified Pb (Mg13 Nb23)O 3 -PbZrO3 -PbTiO3 single crystals for high power broad bandwidth transducers",

abstract = "The effect of MnO2 addition on the dielectric and piezoelectric properties of 0.4Pb (Mg13 Nb23) O3 -0.25PbZr O3 -0.35PbTi O3 single crystals was investigated. Analogous to acceptor doping in {"}hard{"} Pb (Zr,Ti) O3 based polycrystalline materials, the Mn doped crystals exhibited enhanced mechanical Q (∼1050) with low dielectric loss (∼0.2%), while maintaining ultrahigh electromechanical coupling k33 >90%, inherent in domain engineered single crystals. The effect of acceptor doping was also evident in the build-up of an internal bias (Ei ∼1.6 kVcm), shown by a horizontal offset in the polarization-field behavior. Together with the relatively high usage temperature (TR-T ∼140 °C), the Mn doped crystals are promising candidates for high power and broad bandwidth transducers.",

author = "Shujun Zhang and Lee, {Sung Min} and Kim, {Dong Ho} and Lee, {Ho Yong} and Shrout, {Thomas R.}",

note = "Funding Information: This work was supported by the Office of Naval Research (ONR) and National Institutes of Health (NIH) under Grant No. P41-RR11795. ",

year = "2008",

doi = "10.1063/1.2992081",

language = "English (US)",

volume = "93",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "12",

}

TY - JOUR

T1 - Characterization of Mn-modified Pb (Mg13 Nb23)O 3 -PbZrO3 -PbTiO3 single crystals for high power broad bandwidth transducers

AU - Zhang, Shujun

AU - Lee, Sung Min

AU - Kim, Dong Ho

AU - Lee, Ho Yong

AU - Shrout, Thomas R.

N1 - Funding Information: This work was supported by the Office of Naval Research (ONR) and National Institutes of Health (NIH) under Grant No. P41-RR11795.

PY - 2008

Y1 - 2008

N2 - The effect of MnO2 addition on the dielectric and piezoelectric properties of 0.4Pb (Mg13 Nb23) O3 -0.25PbZr O3 -0.35PbTi O3 single crystals was investigated. Analogous to acceptor doping in "hard" Pb (Zr,Ti) O3 based polycrystalline materials, the Mn doped crystals exhibited enhanced mechanical Q (∼1050) with low dielectric loss (∼0.2%), while maintaining ultrahigh electromechanical coupling k33 >90%, inherent in domain engineered single crystals. The effect of acceptor doping was also evident in the build-up of an internal bias (Ei ∼1.6 kVcm), shown by a horizontal offset in the polarization-field behavior. Together with the relatively high usage temperature (TR-T ∼140 °C), the Mn doped crystals are promising candidates for high power and broad bandwidth transducers.

AB - The effect of MnO2 addition on the dielectric and piezoelectric properties of 0.4Pb (Mg13 Nb23) O3 -0.25PbZr O3 -0.35PbTi O3 single crystals was investigated. Analogous to acceptor doping in "hard" Pb (Zr,Ti) O3 based polycrystalline materials, the Mn doped crystals exhibited enhanced mechanical Q (∼1050) with low dielectric loss (∼0.2%), while maintaining ultrahigh electromechanical coupling k33 >90%, inherent in domain engineered single crystals. The effect of acceptor doping was also evident in the build-up of an internal bias (Ei ∼1.6 kVcm), shown by a horizontal offset in the polarization-field behavior. Together with the relatively high usage temperature (TR-T ∼140 °C), the Mn doped crystals are promising candidates for high power and broad bandwidth transducers.

UR - http://www.scopus.com/inward/record.url?scp=52949102517&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=52949102517&partnerID=8YFLogxK

U2 - 10.1063/1.2992081

DO - 10.1063/1.2992081

M3 - Article

AN - SCOPUS:52949102517

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 12

M1 - 122908

ER -