Characterization of Mn-modified Pb (Mg13 Nb23)O 3 -PbZrO3 -PbTiO3 single crystals for high power broad bandwidth transducers

Shujun Zhang, Sung Min Lee, Dong Ho Kim, Ho Yong Lee, Thomas R. Shrout

Research output: Contribution to journalArticle

92 Citations (Scopus)

Abstract

The effect of MnO2 addition on the dielectric and piezoelectric properties of 0.4Pb (Mg13 Nb23) O3 -0.25PbZr O3 -0.35PbTi O3 single crystals was investigated. Analogous to acceptor doping in "hard" Pb (Zr,Ti) O3 based polycrystalline materials, the Mn doped crystals exhibited enhanced mechanical Q (∼1050) with low dielectric loss (∼0.2%), while maintaining ultrahigh electromechanical coupling k33 >90%, inherent in domain engineered single crystals. The effect of acceptor doping was also evident in the build-up of an internal bias (Ei ∼1.6 kVcm), shown by a horizontal offset in the polarization-field behavior. Together with the relatively high usage temperature (TR-T ∼140 °C), the Mn doped crystals are promising candidates for high power and broad bandwidth transducers.

Original languageEnglish (US)
Article number122908
JournalApplied Physics Letters
Volume93
Issue number12
DOIs
StatePublished - Oct 6 2008

Fingerprint

doped crystals
transducers
bandwidth
single crystals
dielectric loss
dielectric properties
polarization
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Zhang, Shujun ; Lee, Sung Min ; Kim, Dong Ho ; Lee, Ho Yong ; Shrout, Thomas R. / Characterization of Mn-modified Pb (Mg13 Nb23)O 3 -PbZrO3 -PbTiO3 single crystals for high power broad bandwidth transducers. In: Applied Physics Letters. 2008 ; Vol. 93, No. 12.
@article{0526c659974e4071bf49138e297f2f62,
title = "Characterization of Mn-modified Pb (Mg13 Nb23)O 3 -PbZrO3 -PbTiO3 single crystals for high power broad bandwidth transducers",
abstract = "The effect of MnO2 addition on the dielectric and piezoelectric properties of 0.4Pb (Mg13 Nb23) O3 -0.25PbZr O3 -0.35PbTi O3 single crystals was investigated. Analogous to acceptor doping in {"}hard{"} Pb (Zr,Ti) O3 based polycrystalline materials, the Mn doped crystals exhibited enhanced mechanical Q (∼1050) with low dielectric loss (∼0.2{\%}), while maintaining ultrahigh electromechanical coupling k33 >90{\%}, inherent in domain engineered single crystals. The effect of acceptor doping was also evident in the build-up of an internal bias (Ei ∼1.6 kVcm), shown by a horizontal offset in the polarization-field behavior. Together with the relatively high usage temperature (TR-T ∼140 °C), the Mn doped crystals are promising candidates for high power and broad bandwidth transducers.",
author = "Shujun Zhang and Lee, {Sung Min} and Kim, {Dong Ho} and Lee, {Ho Yong} and Shrout, {Thomas R.}",
year = "2008",
month = "10",
day = "6",
doi = "10.1063/1.2992081",
language = "English (US)",
volume = "93",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "12",

}

Characterization of Mn-modified Pb (Mg13 Nb23)O 3 -PbZrO3 -PbTiO3 single crystals for high power broad bandwidth transducers. / Zhang, Shujun; Lee, Sung Min; Kim, Dong Ho; Lee, Ho Yong; Shrout, Thomas R.

In: Applied Physics Letters, Vol. 93, No. 12, 122908, 06.10.2008.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Characterization of Mn-modified Pb (Mg13 Nb23)O 3 -PbZrO3 -PbTiO3 single crystals for high power broad bandwidth transducers

AU - Zhang, Shujun

AU - Lee, Sung Min

AU - Kim, Dong Ho

AU - Lee, Ho Yong

AU - Shrout, Thomas R.

PY - 2008/10/6

Y1 - 2008/10/6

N2 - The effect of MnO2 addition on the dielectric and piezoelectric properties of 0.4Pb (Mg13 Nb23) O3 -0.25PbZr O3 -0.35PbTi O3 single crystals was investigated. Analogous to acceptor doping in "hard" Pb (Zr,Ti) O3 based polycrystalline materials, the Mn doped crystals exhibited enhanced mechanical Q (∼1050) with low dielectric loss (∼0.2%), while maintaining ultrahigh electromechanical coupling k33 >90%, inherent in domain engineered single crystals. The effect of acceptor doping was also evident in the build-up of an internal bias (Ei ∼1.6 kVcm), shown by a horizontal offset in the polarization-field behavior. Together with the relatively high usage temperature (TR-T ∼140 °C), the Mn doped crystals are promising candidates for high power and broad bandwidth transducers.

AB - The effect of MnO2 addition on the dielectric and piezoelectric properties of 0.4Pb (Mg13 Nb23) O3 -0.25PbZr O3 -0.35PbTi O3 single crystals was investigated. Analogous to acceptor doping in "hard" Pb (Zr,Ti) O3 based polycrystalline materials, the Mn doped crystals exhibited enhanced mechanical Q (∼1050) with low dielectric loss (∼0.2%), while maintaining ultrahigh electromechanical coupling k33 >90%, inherent in domain engineered single crystals. The effect of acceptor doping was also evident in the build-up of an internal bias (Ei ∼1.6 kVcm), shown by a horizontal offset in the polarization-field behavior. Together with the relatively high usage temperature (TR-T ∼140 °C), the Mn doped crystals are promising candidates for high power and broad bandwidth transducers.

UR - http://www.scopus.com/inward/record.url?scp=52949102517&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=52949102517&partnerID=8YFLogxK

U2 - 10.1063/1.2992081

DO - 10.1063/1.2992081

M3 - Article

AN - SCOPUS:52949102517

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 12

M1 - 122908

ER -