Abstract
The effect of MnO2 addition on the dielectric and piezoelectric properties of 0.4Pb (Mg13 Nb23) O3 -0.25PbZr O3 -0.35PbTi O3 single crystals was investigated. Analogous to acceptor doping in "hard" Pb (Zr,Ti) O3 based polycrystalline materials, the Mn doped crystals exhibited enhanced mechanical Q (∼1050) with low dielectric loss (∼0.2%), while maintaining ultrahigh electromechanical coupling k33 >90%, inherent in domain engineered single crystals. The effect of acceptor doping was also evident in the build-up of an internal bias (Ei ∼1.6 kVcm), shown by a horizontal offset in the polarization-field behavior. Together with the relatively high usage temperature (TR-T ∼140 °C), the Mn doped crystals are promising candidates for high power and broad bandwidth transducers.
| Original language | English (US) |
|---|---|
| Article number | 122908 |
| Journal | Applied Physics Letters |
| Volume | 93 |
| Issue number | 12 |
| DOIs | |
| State | Published - Oct 6 2008 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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Characterization of Mn-modified Pb (Mg13 Nb23)O 3 -PbZrO3 -PbTiO3 single crystals for high power broad bandwidth transducers. / Zhang, Shujun; Lee, Sung Min; Kim, Dong Ho; Lee, Ho Yong; Shrout, Thomas R.
In: Applied Physics Letters, Vol. 93, No. 12, 122908, 06.10.2008.Research output: Contribution to journal › Article
TY - JOUR
T1 - Characterization of Mn-modified Pb (Mg13 Nb23)O 3 -PbZrO3 -PbTiO3 single crystals for high power broad bandwidth transducers
AU - Zhang, Shujun
AU - Lee, Sung Min
AU - Kim, Dong Ho
AU - Lee, Ho Yong
AU - Shrout, Thomas R.
PY - 2008/10/6
Y1 - 2008/10/6
N2 - The effect of MnO2 addition on the dielectric and piezoelectric properties of 0.4Pb (Mg13 Nb23) O3 -0.25PbZr O3 -0.35PbTi O3 single crystals was investigated. Analogous to acceptor doping in "hard" Pb (Zr,Ti) O3 based polycrystalline materials, the Mn doped crystals exhibited enhanced mechanical Q (∼1050) with low dielectric loss (∼0.2%), while maintaining ultrahigh electromechanical coupling k33 >90%, inherent in domain engineered single crystals. The effect of acceptor doping was also evident in the build-up of an internal bias (Ei ∼1.6 kVcm), shown by a horizontal offset in the polarization-field behavior. Together with the relatively high usage temperature (TR-T ∼140 °C), the Mn doped crystals are promising candidates for high power and broad bandwidth transducers.
AB - The effect of MnO2 addition on the dielectric and piezoelectric properties of 0.4Pb (Mg13 Nb23) O3 -0.25PbZr O3 -0.35PbTi O3 single crystals was investigated. Analogous to acceptor doping in "hard" Pb (Zr,Ti) O3 based polycrystalline materials, the Mn doped crystals exhibited enhanced mechanical Q (∼1050) with low dielectric loss (∼0.2%), while maintaining ultrahigh electromechanical coupling k33 >90%, inherent in domain engineered single crystals. The effect of acceptor doping was also evident in the build-up of an internal bias (Ei ∼1.6 kVcm), shown by a horizontal offset in the polarization-field behavior. Together with the relatively high usage temperature (TR-T ∼140 °C), the Mn doped crystals are promising candidates for high power and broad bandwidth transducers.
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U2 - 10.1063/1.2992081
DO - 10.1063/1.2992081
M3 - Article
AN - SCOPUS:52949102517
VL - 93
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 12
M1 - 122908
ER -