Characterization of near-surface electrical properties of multi-crystalline silicon wafers

P. Drummond, A. Kshirsagar, J. Ruzyllo

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

This experiment is concerned with photoconductive decay (PCD) measurements devised specifically for the purpose of characterization of the near-surface region of semiconductor substrates. Specifically, the method is utilized to evaluate the effects of crystallographic orientation, grain boundaries, and surface texturing on the near-surface electrical properties of multi-crystalline silicon (mc-Si) wafers used for solar cell applications. The PCD method is also explored for the purposes of monitoring processes used in the manufacture of mc-Si solar cells. The effect of saw damage and damage removal by wet etching on the near-surface lifetime of minority carriers and carrier mobility in mc-Si wafers is quantitatively determined. The results obtained demonstrate a direct correlation between condition of the mc-Si surface and the electrical parameters measured. It is postulated that the PCD method using temporary contact can be effectively used to monitor the condition of mc-Si surfaces during solar cell manufacturing.

Original languageEnglish (US)
Pages (from-to)29-36
Number of pages8
JournalSolid-State Electronics
Volume55
Issue number1
DOIs
StatePublished - Jan 1 2011

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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