Characterization of rhenium Schottky contacts on n-type AlxGa1-xN

L. Zhou, A. T. Ping, K. Boutros, J. Redwing, I. Adesida

Research output: Contribution to journalArticle

18 Scopus citations

Abstract

The electrical characteristics of Re Schottky contacts on AlxGa1-xN (x = 0, 0.15, 0.22 and 0.26) grown by MOCVD on sapphire substrates have been investigated. The effective barrier heights were obtained from current-voltage and capacitance-voltage measurements and were found to increase with aluminum concentration.

Original languageEnglish (US)
Pages (from-to)745-746
Number of pages2
JournalElectronics Letters
Volume35
Issue number9
DOIs
StatePublished - Apr 29 1999

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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