Characterization of semiconductor heterojunctions using internal photoemission

Ing Shin Chen, T. N. Jackson, C. R. Wronski

Research output: Contribution to journalReview article

14 Scopus citations

Abstract

Internal photoemission is a photoelectric characterization technique commonly used to study semiconductor heterojunction characteristics. Previous analyses of internal photoemission including those of Fowler, Kane, and Powell have been well accepted and applied; however, the quantum effects were not fully taken into account. We examined the quantum effects on internal photoemission spectra and found that the photoemission yield, Y(hν), is proportional to (hν-ET)γ, where hν is the photon energy, ET is the threshold energy, and γ is a constant determined by the emitter density of states, the transmission probability, and the collector conduction band density of states, respectively.

Original languageEnglish (US)
Pages (from-to)8470-8474
Number of pages5
JournalJournal of Applied Physics
Volume79
Issue number11
DOIs
StatePublished - Jun 1 1996

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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