Characterization of Si-N films prepared by reactive ion beam sputtering

M. D. Aggarwal, S Ashok, S. J. Fonash

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

Application of silicon-nitride (Si-N) as a passivant in com-pound semiconductor technology requires a low-temperature deposition process to prevent dissociation of the volatile constituents of the semiconductor. With this in mind, an exploratory study of Si-N films prepared at room temperature using low-energy, reactive ion-beam sputtering has been carried out. The electrical and optical characteristics of the films have been studied, and an annealing step is found necessary to reduce the conductivity of the nitride and im-prove the interfacial properties.

Original languageEnglish (US)
Pages (from-to)491-504
Number of pages14
JournalJournal of Electronic Materials
Volume11
Issue number3
DOIs
StatePublished - May 1 1982

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Characterization of Si-N films prepared by reactive ion beam sputtering'. Together they form a unique fingerprint.

  • Cite this