Characterization of sulfur passivated n-GaSb using transmission electron microscopy and the influence of passivation on ohmic contact resistance

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Abstract

Sulfur passivation of (100) n-GaSb was studied using transmission electron microscopy. An amorphous Ga-S layer was found to be formed with a thickness dependence on the duration of passivation. It was also found that the sulfur layer remains amorphous when annealed at 350°C for 10 min, but becomes nanocrystalline and enriched with Ga from the GaSb on annealing at 500°C for 20 min. The result show that sulfur passivation can inhibit reaction between a contact metallization and GaSb if used as a permetallization surface preparation.

Original languageEnglish (US)
Pages (from-to)2684-2688
Number of pages5
JournalJournal of Applied Physics
Volume96
Issue number5
DOIs
StatePublished - Sep 1 2004

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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