A fast transient current (TC) technique has been developed for the characterization of majority carrier charge emission from surface states using MOS capacitors excited by a voltage step-function. This technique, with appropriate choice of initial and final biasing conditions, allows a rapid determination of the density of surface states (Nss) and their capture cross section values (σn) in preselected regions of band gap using suitable temperature ambients. A low temperature (113°K) was used for regions close to the bottom of conduction band and room temperature and moderately low temperatures were used for the mid-gap region. Results of transient current measurements were compared with those obtained from thermally stimulated current and low frequency C-V measurements. The MOS devices were fabricated using  oriented n-type (6-8 Ω-cm) silicon on n+ substrates with HCl added to the oxidizing ambient. The detectability limit of the TC technique has been found to be approximately 1 × 1010 cm-2 eV-1 for the device area used.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry