Characterization of surface states in HCl-grown oxides using MOS transient currents

Paul Esqueda, Mukunda B. Das

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A fast transient current (TC) technique has been developed for the characterization of majority carrier charge emission from surface states using MOS capacitors excited by a voltage step-function. This technique, with appropriate choice of initial and final biasing conditions, allows a rapid determination of the density of surface states (Nss) and their capture cross section values (σn) in preselected regions of band gap using suitable temperature ambients. A low temperature (113°K) was used for regions close to the bottom of conduction band and room temperature and moderately low temperatures were used for the mid-gap region. Results of transient current measurements were compared with those obtained from thermally stimulated current and low frequency C-V measurements. The MOS devices were fabricated using [100] oriented n-type (6-8 Ω-cm) silicon on n+ substrates with HCl added to the oxidizing ambient. The detectability limit of the TC technique has been found to be approximately 1 × 1010 cm-2 eV-1 for the device area used.

Original languageEnglish (US)
Pages (from-to)365-375
Number of pages11
JournalSolid State Electronics
Volume23
Issue number4
DOIs
StatePublished - Jan 1 1980

Fingerprint

Surface states
Oxides
oxides
MOS capacitors
Temperature
step functions
majority carriers
MOS devices
Electric current measurement
Silicon
Conduction bands
Charge carriers
absorption cross sections
ambient temperature
capacitors
conduction bands
Energy gap
low frequencies
Electric potential
electric potential

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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Characterization of surface states in HCl-grown oxides using MOS transient currents. / Esqueda, Paul; Das, Mukunda B.

In: Solid State Electronics, Vol. 23, No. 4, 01.01.1980, p. 365-375.

Research output: Contribution to journalArticle

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AU - Das, Mukunda B.

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