Characterization of the piezoelectric properties of Pb0.98 Ba0.02(Mg1/3Nb2/3)O3- PbTiO3 epitaxial thin films

Jon Paul Maria, Joseph F. Shepard, Susan Trolier-McKinstry, T. R. Watkins, A. E. Payzant

Research output: Contribution to journalArticlepeer-review

20 Scopus citations


Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) (70/30) thin films were deposited by pulsed laser deposition using two growth strategies: adsorption controlled deposition from lead-rich targets (∼ 25-30 mass%) and lower-temperature deposition (Td≤ 600°C) from targets containing a small amount of excess lead oxide (≤ 3 mass %). The substrates used were (001) SrRuO3/LaAlO3. Typical remanent polarization values ranged between 12 and 14 μC/cm2 for these films. The longitudinal piezoelectric coefficient (d33,f) was measured using in situ four-circle X-ray diffraction, and the transverse coefficient (d31,f or e31,f) was measured using the wafer flexure method. d33,f and e31,f coefficients of ∼ 300-350 pm/V and ∼ -11 C/m2 were calculated, respectively. In general, the piezoelectric coefficients and aging rates were strongly asymmetric, suggesting the presence of a polarization bias. The large, extremely stable piezoelectric response that results from poling parallel to the preferred polarization direction is attractive for miniaturized sensors and actuators.

Original languageEnglish (US)
Pages (from-to)51-58
Number of pages8
JournalInternational Journal of Applied Ceramic Technology
Issue number1
StatePublished - Jan 1 2005

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Condensed Matter Physics
  • Marketing
  • Materials Chemistry


Dive into the research topics of 'Characterization of the piezoelectric properties of Pb0.98 Ba0.02(Mg1/3Nb2/3)O3- PbTiO3 epitaxial thin films'. Together they form a unique fingerprint.

Cite this