Characterization of the SilSpin etch-back (breakthrough) process for nanolithography with CHF3 and O2 gas chemistry

Hector Carrion, Michael Rogosky, Harriet Black Nembhard, Sanjay B. Joshi, Jeffrey M. Catchmark

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Abstract

This study characterizes the SilSpin™ etch-back process within the reverse tone step and flash imprint lithography (SFIL/R). Currently, the S-FIL/R operational specifications to etch the SilSpin material require a Standard Reactive Ion Etch (RIE) platform which etches the polymers at a slower rate than a high density plasma reactor. The goal of the study was to determine the significant process parameters in the SilSpin Etch-Back process using a magnetically enhanced reactive etching (MERIE) reactor with CHF3 and O2 gas chemistry. The experimental approach taken uses a 2 factorial design to characterize the relationships between the process factors and etch responses. The factors in the design are: reactor pressure, RF power, gas ratio, and magnetic flux. The significant factors and their interaction levels to uniformly etch the SilSpin in the MERIE were determined along with the best set of operating parameters. This information applied through the response surface methodology enabled the development of empirical etch behavior models. Subsequently, the contour plots illustrated a desirable operational region for each factor.

Original languageEnglish (US)
StatePublished - Dec 1 2006
Event2006 IIE Annual Conference and Exposition - Orlando, FL, United States
Duration: May 20 2006May 24 2006

Other

Other2006 IIE Annual Conference and Exposition
CountryUnited States
CityOrlando, FL
Period5/20/065/24/06

Fingerprint

Nanolithography
Etching
Plasma density
Magnetic flux
Gases
Lithography
Specifications
Ions
Polymers

All Science Journal Classification (ASJC) codes

  • Industrial and Manufacturing Engineering

Cite this

Carrion, H., Rogosky, M., Nembhard, H. B., Joshi, S. B., & Catchmark, J. M. (2006). Characterization of the SilSpin etch-back (breakthrough) process for nanolithography with CHF3 and O2 gas chemistry. Paper presented at 2006 IIE Annual Conference and Exposition, Orlando, FL, United States.
Carrion, Hector ; Rogosky, Michael ; Nembhard, Harriet Black ; Joshi, Sanjay B. ; Catchmark, Jeffrey M. / Characterization of the SilSpin etch-back (breakthrough) process for nanolithography with CHF3 and O2 gas chemistry. Paper presented at 2006 IIE Annual Conference and Exposition, Orlando, FL, United States.
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abstract = "This study characterizes the SilSpin™ etch-back process within the reverse tone step and flash imprint lithography (SFIL/R). Currently, the S-FIL/R operational specifications to etch the SilSpin material require a Standard Reactive Ion Etch (RIE) platform which etches the polymers at a slower rate than a high density plasma reactor. The goal of the study was to determine the significant process parameters in the SilSpin Etch-Back process using a magnetically enhanced reactive etching (MERIE) reactor with CHF3 and O2 gas chemistry. The experimental approach taken uses a 2 factorial design to characterize the relationships between the process factors and etch responses. The factors in the design are: reactor pressure, RF power, gas ratio, and magnetic flux. The significant factors and their interaction levels to uniformly etch the SilSpin in the MERIE were determined along with the best set of operating parameters. This information applied through the response surface methodology enabled the development of empirical etch behavior models. Subsequently, the contour plots illustrated a desirable operational region for each factor.",
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Carrion, H, Rogosky, M, Nembhard, HB, Joshi, SB & Catchmark, JM 2006, 'Characterization of the SilSpin etch-back (breakthrough) process for nanolithography with CHF3 and O2 gas chemistry', Paper presented at 2006 IIE Annual Conference and Exposition, Orlando, FL, United States, 5/20/06 - 5/24/06.

Characterization of the SilSpin etch-back (breakthrough) process for nanolithography with CHF3 and O2 gas chemistry. / Carrion, Hector; Rogosky, Michael; Nembhard, Harriet Black; Joshi, Sanjay B.; Catchmark, Jeffrey M.

2006. Paper presented at 2006 IIE Annual Conference and Exposition, Orlando, FL, United States.

Research output: Contribution to conferencePaper

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T1 - Characterization of the SilSpin etch-back (breakthrough) process for nanolithography with CHF3 and O2 gas chemistry

AU - Carrion, Hector

AU - Rogosky, Michael

AU - Nembhard, Harriet Black

AU - Joshi, Sanjay B.

AU - Catchmark, Jeffrey M.

PY - 2006/12/1

Y1 - 2006/12/1

N2 - This study characterizes the SilSpin™ etch-back process within the reverse tone step and flash imprint lithography (SFIL/R). Currently, the S-FIL/R operational specifications to etch the SilSpin material require a Standard Reactive Ion Etch (RIE) platform which etches the polymers at a slower rate than a high density plasma reactor. The goal of the study was to determine the significant process parameters in the SilSpin Etch-Back process using a magnetically enhanced reactive etching (MERIE) reactor with CHF3 and O2 gas chemistry. The experimental approach taken uses a 2 factorial design to characterize the relationships between the process factors and etch responses. The factors in the design are: reactor pressure, RF power, gas ratio, and magnetic flux. The significant factors and their interaction levels to uniformly etch the SilSpin in the MERIE were determined along with the best set of operating parameters. This information applied through the response surface methodology enabled the development of empirical etch behavior models. Subsequently, the contour plots illustrated a desirable operational region for each factor.

AB - This study characterizes the SilSpin™ etch-back process within the reverse tone step and flash imprint lithography (SFIL/R). Currently, the S-FIL/R operational specifications to etch the SilSpin material require a Standard Reactive Ion Etch (RIE) platform which etches the polymers at a slower rate than a high density plasma reactor. The goal of the study was to determine the significant process parameters in the SilSpin Etch-Back process using a magnetically enhanced reactive etching (MERIE) reactor with CHF3 and O2 gas chemistry. The experimental approach taken uses a 2 factorial design to characterize the relationships between the process factors and etch responses. The factors in the design are: reactor pressure, RF power, gas ratio, and magnetic flux. The significant factors and their interaction levels to uniformly etch the SilSpin in the MERIE were determined along with the best set of operating parameters. This information applied through the response surface methodology enabled the development of empirical etch behavior models. Subsequently, the contour plots illustrated a desirable operational region for each factor.

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Carrion H, Rogosky M, Nembhard HB, Joshi SB, Catchmark JM. Characterization of the SilSpin etch-back (breakthrough) process for nanolithography with CHF3 and O2 gas chemistry. 2006. Paper presented at 2006 IIE Annual Conference and Exposition, Orlando, FL, United States.