Characterization of two E' center charge traps in conventionally grown thermal SiO2 on Si

J. F. Conley, Patrick M. Lenahan, H. L. Evans, R. K. Lowry, T. J. Morthorst

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We use electron spin resonance to characterize two E' variant charge traps in conventionally grown thermal SiO2.

Original languageEnglish (US)
Title of host publicationEuropean Solid-State Device Research Conference
EditorsPeter Ashburn, Chris Hill
PublisherIEEE Computer Society
Pages309-312
Number of pages4
ISBN (Electronic)2863321579
StatePublished - Jan 1 1994
Event24th European Solid State Device Research Conference, ESSDERC 1994 - Edinburgh, United Kingdom
Duration: Sep 11 1994Sep 15 1994

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Other

Other24th European Solid State Device Research Conference, ESSDERC 1994
Country/TerritoryUnited Kingdom
CityEdinburgh
Period9/11/949/15/94

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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