We study the charge distribution in GaAs-Ga1-xAlxAs heterostructures under an external magnetic field perpendicular to the interfaces. We obtain the charge-density profile by solving in a self-consistent way the Poisson and Schrödinger equations. Our results show that in a quantum well of Ga1-xAlxAs-GaAs-Ga1-xAl xAs with widths ranging between 70 and 110 Å the charge accumulation is a strongly dependent function of the well width and the external magnetic field.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)