Charge distribution in GaAs-Ga1-xAlxAs heterostructures under an external magnetic field

Jorge Osvaldo Sofo, C. R. Proetto, C. A. Balseiro

Research output: Contribution to journalArticle

Abstract

We study the charge distribution in GaAs-Ga1-xAlxAs heterostructures under an external magnetic field perpendicular to the interfaces. We obtain the charge-density profile by solving in a self-consistent way the Poisson and Schrödinger equations. Our results show that in a quantum well of Ga1-xAlxAs-GaAs-Ga1-xAl xAs with widths ranging between 70 and 110 Å the charge accumulation is a strongly dependent function of the well width and the external magnetic field.

Original languageEnglish (US)
Pages (from-to)282-284
Number of pages3
JournalApplied Physics Letters
Volume53
Issue number4
DOIs
StatePublished - Dec 1 1988

Fingerprint

charge distribution
Poisson equation
magnetic fields
quantum wells
profiles

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

@article{d1535375f710463584c2a944d25f71ac,
title = "Charge distribution in GaAs-Ga1-xAlxAs heterostructures under an external magnetic field",
abstract = "We study the charge distribution in GaAs-Ga1-xAlxAs heterostructures under an external magnetic field perpendicular to the interfaces. We obtain the charge-density profile by solving in a self-consistent way the Poisson and Schr{\"o}dinger equations. Our results show that in a quantum well of Ga1-xAlxAs-GaAs-Ga1-xAl xAs with widths ranging between 70 and 110 {\AA} the charge accumulation is a strongly dependent function of the well width and the external magnetic field.",
author = "Sofo, {Jorge Osvaldo} and Proetto, {C. R.} and Balseiro, {C. A.}",
year = "1988",
month = "12",
day = "1",
doi = "10.1063/1.100151",
language = "English (US)",
volume = "53",
pages = "282--284",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "4",

}

Charge distribution in GaAs-Ga1-xAlxAs heterostructures under an external magnetic field. / Sofo, Jorge Osvaldo; Proetto, C. R.; Balseiro, C. A.

In: Applied Physics Letters, Vol. 53, No. 4, 01.12.1988, p. 282-284.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Charge distribution in GaAs-Ga1-xAlxAs heterostructures under an external magnetic field

AU - Sofo, Jorge Osvaldo

AU - Proetto, C. R.

AU - Balseiro, C. A.

PY - 1988/12/1

Y1 - 1988/12/1

N2 - We study the charge distribution in GaAs-Ga1-xAlxAs heterostructures under an external magnetic field perpendicular to the interfaces. We obtain the charge-density profile by solving in a self-consistent way the Poisson and Schrödinger equations. Our results show that in a quantum well of Ga1-xAlxAs-GaAs-Ga1-xAl xAs with widths ranging between 70 and 110 Å the charge accumulation is a strongly dependent function of the well width and the external magnetic field.

AB - We study the charge distribution in GaAs-Ga1-xAlxAs heterostructures under an external magnetic field perpendicular to the interfaces. We obtain the charge-density profile by solving in a self-consistent way the Poisson and Schrödinger equations. Our results show that in a quantum well of Ga1-xAlxAs-GaAs-Ga1-xAl xAs with widths ranging between 70 and 110 Å the charge accumulation is a strongly dependent function of the well width and the external magnetic field.

UR - http://www.scopus.com/inward/record.url?scp=36549095672&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36549095672&partnerID=8YFLogxK

U2 - 10.1063/1.100151

DO - 10.1063/1.100151

M3 - Article

VL - 53

SP - 282

EP - 284

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 4

ER -