Charge distribution in GaAs-Ga1-xAlxAs heterostructures under an external magnetic field

Jorge Osvaldo Sofo, C. R. Proetto, C. A. Balseiro

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Abstract

We study the charge distribution in GaAs-Ga1-xAlxAs heterostructures under an external magnetic field perpendicular to the interfaces. We obtain the charge-density profile by solving in a self-consistent way the Poisson and Schrödinger equations. Our results show that in a quantum well of Ga1-xAlxAs-GaAs-Ga1-xAl xAs with widths ranging between 70 and 110 Å the charge accumulation is a strongly dependent function of the well width and the external magnetic field.

Original languageEnglish (US)
Pages (from-to)282-284
Number of pages3
JournalApplied Physics Letters
Volume53
Issue number4
DOIs
StatePublished - Dec 1 1988

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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