Charge storage characteristics of metal-induced nanocrystalline in erbium-doped amorphous silicon films

Zhigang Li, Weihua Guan, Ming Liu, Shibing Long, Rui Jia, Jin Lv, Yi Shi, Xinwei Zhao

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Amorphous silicon film (α-Si) doped with uniform erbium (Er) impurities is deposited by laser ablation technology. High density silicon nanocrystals (nc-Si) can be formed after the rapid thermal annealing (RTA) process. The crystalline process can be explained as the "metal-induced nanocrystalline mechanism", i.e., doped erbium atoms introduce additional strain in the amorphous silicon matrix and behave as nucleation centers during the thermal annealing process. Through this method, Si nanocrystals with high density and self-limited size distribution can be obtained. The experimental results demonstrate that the Er-induced nanocrystalline silicon film has good charge storage characteristics. It is shown that the optimal condition for the Er-induced nanocrystalline layer in α-Si is with 1 wt.% Er concentration and 1100 °C RTA process for 30 s.

Original languageEnglish (US)
Pages (from-to)7657-7660
Number of pages4
JournalThin Solid Films
Volume516
Issue number21
DOIs
StatePublished - Sep 1 2008

Fingerprint

Erbium
silicon films
Amorphous silicon
erbium
amorphous silicon
Metals
metals
Rapid thermal annealing
Nanocrystals
annealing
nanocrystals
Nanocrystalline silicon
Silicon
Laser ablation
laser ablation
Nucleation
nucleation
Annealing
Impurities
Crystalline materials

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Li, Zhigang ; Guan, Weihua ; Liu, Ming ; Long, Shibing ; Jia, Rui ; Lv, Jin ; Shi, Yi ; Zhao, Xinwei. / Charge storage characteristics of metal-induced nanocrystalline in erbium-doped amorphous silicon films. In: Thin Solid Films. 2008 ; Vol. 516, No. 21. pp. 7657-7660.
@article{ba6cad24b70d40338fbfc839875b5b27,
title = "Charge storage characteristics of metal-induced nanocrystalline in erbium-doped amorphous silicon films",
abstract = "Amorphous silicon film (α-Si) doped with uniform erbium (Er) impurities is deposited by laser ablation technology. High density silicon nanocrystals (nc-Si) can be formed after the rapid thermal annealing (RTA) process. The crystalline process can be explained as the {"}metal-induced nanocrystalline mechanism{"}, i.e., doped erbium atoms introduce additional strain in the amorphous silicon matrix and behave as nucleation centers during the thermal annealing process. Through this method, Si nanocrystals with high density and self-limited size distribution can be obtained. The experimental results demonstrate that the Er-induced nanocrystalline silicon film has good charge storage characteristics. It is shown that the optimal condition for the Er-induced nanocrystalline layer in α-Si is with 1 wt.{\%} Er concentration and 1100 °C RTA process for 30 s.",
author = "Zhigang Li and Weihua Guan and Ming Liu and Shibing Long and Rui Jia and Jin Lv and Yi Shi and Xinwei Zhao",
year = "2008",
month = "9",
day = "1",
doi = "10.1016/j.tsf.2008.02.009",
language = "English (US)",
volume = "516",
pages = "7657--7660",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "21",

}

Charge storage characteristics of metal-induced nanocrystalline in erbium-doped amorphous silicon films. / Li, Zhigang; Guan, Weihua; Liu, Ming; Long, Shibing; Jia, Rui; Lv, Jin; Shi, Yi; Zhao, Xinwei.

In: Thin Solid Films, Vol. 516, No. 21, 01.09.2008, p. 7657-7660.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Charge storage characteristics of metal-induced nanocrystalline in erbium-doped amorphous silicon films

AU - Li, Zhigang

AU - Guan, Weihua

AU - Liu, Ming

AU - Long, Shibing

AU - Jia, Rui

AU - Lv, Jin

AU - Shi, Yi

AU - Zhao, Xinwei

PY - 2008/9/1

Y1 - 2008/9/1

N2 - Amorphous silicon film (α-Si) doped with uniform erbium (Er) impurities is deposited by laser ablation technology. High density silicon nanocrystals (nc-Si) can be formed after the rapid thermal annealing (RTA) process. The crystalline process can be explained as the "metal-induced nanocrystalline mechanism", i.e., doped erbium atoms introduce additional strain in the amorphous silicon matrix and behave as nucleation centers during the thermal annealing process. Through this method, Si nanocrystals with high density and self-limited size distribution can be obtained. The experimental results demonstrate that the Er-induced nanocrystalline silicon film has good charge storage characteristics. It is shown that the optimal condition for the Er-induced nanocrystalline layer in α-Si is with 1 wt.% Er concentration and 1100 °C RTA process for 30 s.

AB - Amorphous silicon film (α-Si) doped with uniform erbium (Er) impurities is deposited by laser ablation technology. High density silicon nanocrystals (nc-Si) can be formed after the rapid thermal annealing (RTA) process. The crystalline process can be explained as the "metal-induced nanocrystalline mechanism", i.e., doped erbium atoms introduce additional strain in the amorphous silicon matrix and behave as nucleation centers during the thermal annealing process. Through this method, Si nanocrystals with high density and self-limited size distribution can be obtained. The experimental results demonstrate that the Er-induced nanocrystalline silicon film has good charge storage characteristics. It is shown that the optimal condition for the Er-induced nanocrystalline layer in α-Si is with 1 wt.% Er concentration and 1100 °C RTA process for 30 s.

UR - http://www.scopus.com/inward/record.url?scp=49349117169&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=49349117169&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2008.02.009

DO - 10.1016/j.tsf.2008.02.009

M3 - Article

AN - SCOPUS:49349117169

VL - 516

SP - 7657

EP - 7660

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 21

ER -