In this work the effect of hafnium content on charge trapping characteristics of Hf-based MOS gate dielectrics is investigated. Direct comparison of charge trapping phenomena in HfO2 and HfSiO4 formed on the Si surface by mist deposition is carried out. Results obtained demonstrate that the amount of trapping increases as the Si content in Hf-Si-O network increases, and hence, in advanced MOS gate applications HfO2 is expected to display more stable electrical characteristics than HfSiO4.
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics