Charge trapping in HfO2 and HfSiO4 MOS gate dielectrics

Kyuhwan Chang, Feng Ming Chang, Jerzy Ruzyllo

Research output: Contribution to journalArticle

15 Scopus citations

Abstract

In this work the effect of hafnium content on charge trapping characteristics of Hf-based MOS gate dielectrics is investigated. Direct comparison of charge trapping phenomena in HfO2 and HfSiO4 formed on the Si surface by mist deposition is carried out. Results obtained demonstrate that the amount of trapping increases as the Si content in Hf-Si-O network increases, and hence, in advanced MOS gate applications HfO2 is expected to display more stable electrical characteristics than HfSiO4.

Original languageEnglish (US)
Pages (from-to)1670-1672
Number of pages3
JournalSolid-State Electronics
Volume50
Issue number9-10
DOIs
StatePublished - Sep 1 2006

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Charge trapping in HfO2 and HfSiO4 MOS gate dielectrics'. Together they form a unique fingerprint.

  • Cite this