Chemical beam deposition of high-k gate dielectrics on III-V semiconductors: TiO2 on In0.53Ga0.47As

Roman Engel-Herbert, Yoontae Hwang, James M. LeBeau, Yan Zheng, Susanne Stemmer

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

We report on the growth of high-permittivity (k) TiO2 thin films on In0.53Ga0.47As channels by chemical beam deposition with titanium isopropoxide as the source. The films grew in a reaction-limited regime with smooth surfaces. High-resolution transmission electron microscopy showed an atomically abrupt interface with the In0.53Ga 0.47As channel that indicated that this interface is thermally stable. Measurements of the leakage currents using metal-oxide-semiconductor capacitors with Pt top electrodes revealed asymmetric characteristics with respect to the bias polarity, suggesting an unfavorable band alignment for CMOS applications. X-ray photoelectron spectroscopy was used to determine the TiO2/In0.53Ga0.47As band offsets. A valence band offset of 2.5 ± 0.1 eV was measured.

Original languageEnglish (US)
Title of host publicationCMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications
Pages111-117
Number of pages7
StatePublished - Dec 1 2009
Event2009 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 14 2009Apr 16 2009

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1155
ISSN (Print)0272-9172

Other

Other2009 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/14/094/16/09

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Engel-Herbert, R., Hwang, Y., LeBeau, J. M., Zheng, Y., & Stemmer, S. (2009). Chemical beam deposition of high-k gate dielectrics on III-V semiconductors: TiO2 on In0.53Ga0.47As. In CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications (pp. 111-117). (Materials Research Society Symposium Proceedings; Vol. 1155).