Chemical beam deposition of high-k gate dielectrics on III-V semiconductors

TiO2 on In0.53Ga0.47As

Roman Engel-Herbert, Yoontae Hwang, James M. LeBeau, Yan Zheng, Susanne Stemmer

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We report on the growth of high-permittivity (k) TiO2 thin films on In0.53Ga0.47As channels by chemical beam deposition with titanium isopropoxide as the source. The films grew in a reaction-limited regime with smooth surfaces. High-resolution transmission electron microscopy showed an atomically abrupt interface with the In0.53Ga 0.47As channel that indicated that this interface is thermally stable. Measurements of the leakage currents using metal-oxide-semiconductor capacitors with Pt top electrodes revealed asymmetric characteristics with respect to the bias polarity, suggesting an unfavorable band alignment for CMOS applications. X-ray photoelectron spectroscopy was used to determine the TiO2/In0.53Ga0.47As band offsets. A valence band offset of 2.5 ± 0.1 eV was measured.

Original languageEnglish (US)
Title of host publicationCMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications
Pages111-117
Number of pages7
Volume1155
StatePublished - Dec 1 2009
Event2009 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 14 2009Apr 16 2009

Other

Other2009 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/14/094/16/09

Fingerprint

Gate dielectrics
High resolution transmission electron microscopy
Valence bands
Leakage currents
Capacitors
Permittivity
X ray photoelectron spectroscopy
Titanium
Metals
Thin films
Electrodes
metal oxide semiconductors
CMOS
polarity
capacitors
leakage
titanium
alignment
photoelectron spectroscopy
permittivity

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Engel-Herbert, R., Hwang, Y., LeBeau, J. M., Zheng, Y., & Stemmer, S. (2009). Chemical beam deposition of high-k gate dielectrics on III-V semiconductors: TiO2 on In0.53Ga0.47As. In CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications (Vol. 1155, pp. 111-117)
Engel-Herbert, Roman ; Hwang, Yoontae ; LeBeau, James M. ; Zheng, Yan ; Stemmer, Susanne. / Chemical beam deposition of high-k gate dielectrics on III-V semiconductors : TiO2 on In0.53Ga0.47As. CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications. Vol. 1155 2009. pp. 111-117
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abstract = "We report on the growth of high-permittivity (k) TiO2 thin films on In0.53Ga0.47As channels by chemical beam deposition with titanium isopropoxide as the source. The films grew in a reaction-limited regime with smooth surfaces. High-resolution transmission electron microscopy showed an atomically abrupt interface with the In0.53Ga 0.47As channel that indicated that this interface is thermally stable. Measurements of the leakage currents using metal-oxide-semiconductor capacitors with Pt top electrodes revealed asymmetric characteristics with respect to the bias polarity, suggesting an unfavorable band alignment for CMOS applications. X-ray photoelectron spectroscopy was used to determine the TiO2/In0.53Ga0.47As band offsets. A valence band offset of 2.5 ± 0.1 eV was measured.",
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Engel-Herbert, R, Hwang, Y, LeBeau, JM, Zheng, Y & Stemmer, S 2009, Chemical beam deposition of high-k gate dielectrics on III-V semiconductors: TiO2 on In0.53Ga0.47As. in CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications. vol. 1155, pp. 111-117, 2009 MRS Spring Meeting, San Francisco, CA, United States, 4/14/09.

Chemical beam deposition of high-k gate dielectrics on III-V semiconductors : TiO2 on In0.53Ga0.47As. / Engel-Herbert, Roman; Hwang, Yoontae; LeBeau, James M.; Zheng, Yan; Stemmer, Susanne.

CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications. Vol. 1155 2009. p. 111-117.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - We report on the growth of high-permittivity (k) TiO2 thin films on In0.53Ga0.47As channels by chemical beam deposition with titanium isopropoxide as the source. The films grew in a reaction-limited regime with smooth surfaces. High-resolution transmission electron microscopy showed an atomically abrupt interface with the In0.53Ga 0.47As channel that indicated that this interface is thermally stable. Measurements of the leakage currents using metal-oxide-semiconductor capacitors with Pt top electrodes revealed asymmetric characteristics with respect to the bias polarity, suggesting an unfavorable band alignment for CMOS applications. X-ray photoelectron spectroscopy was used to determine the TiO2/In0.53Ga0.47As band offsets. A valence band offset of 2.5 ± 0.1 eV was measured.

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Engel-Herbert R, Hwang Y, LeBeau JM, Zheng Y, Stemmer S. Chemical beam deposition of high-k gate dielectrics on III-V semiconductors: TiO2 on In0.53Ga0.47As. In CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications. Vol. 1155. 2009. p. 111-117