Chemical-potential-dependent gap opening at the dirac surface states of Bi 2 Se 3 induced by aggregated substitutional Cr atoms

Cui Zu Chang, Peizhe Tang, Yi Lin Wang, Xiao Feng, Kang Li, Zuocheng Zhang, Yayu Wang, Li Li Wang, Xi Chen, Chaoxing Liu, Wenhui Duan, Ke He, Xu Cun Ma, Qi Kun Xue

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Abstract

With angle-resolved photoemission spectroscopy, gap opening is resolved at up to room temperature in the Dirac surface states of molecular beam epitaxy grown Cr-doped Bi2Se3 topological insulator films, which, however, show no long-range ferromagnetic order down to 1.5 K. The gap size is found decreasing with increasing electron-doping level. Scanning tunneling microscopy and first-principles calculations demonstrate that substitutional Cr atoms aggregate into superparamagnetic multimers in the Bi2Se3 matrix, which contribute to the observed chemical-potential-dependent gap opening in the Dirac surface states without long-range ferromagnetic order.

Original languageEnglish (US)
Article number056801
JournalPhysical Review Letters
Volume112
Issue number5
DOIs
StatePublished - Feb 6 2014

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Chang, C. Z., Tang, P., Wang, Y. L., Feng, X., Li, K., Zhang, Z., Wang, Y., Wang, L. L., Chen, X., Liu, C., Duan, W., He, K., Ma, X. C., & Xue, Q. K. (2014). Chemical-potential-dependent gap opening at the dirac surface states of Bi 2 Se 3 induced by aggregated substitutional Cr atoms. Physical Review Letters, 112(5), [056801]. https://doi.org/10.1103/PhysRevLett.112.056801