Chemical pressure effect on the optical conductivity of the nodal-line semimetals ZrSiY (Y= S,Se,Te) and ZrGeY (Y= S,Te)

J. Ebad-Allah, J.F. Afonso, Krottenm M., J. Hu, Y.L. Zhu, Z.Q. Mao, Kune J., C.A. Kuntscher

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

ZrSiS is a nodal-line semimetal, whose electronic band structure contains a diamond-shaped line of Dirac nodes. We carried out a comparative study on the optical conductivity of ZrSiS and the related compounds ZrSiSe, ZrSiTe, ZrGeS, and ZrGeTe by reflectivity measurements over a broad frequency range combined with density functional theory calculations. The optical conductivity exhibits a distinct U shape, ending at a sharp peak at around 10000cm-1 for all studied compounds except for ZrSiTe. The U shape of the optical conductivity is due to transitions between the linearly dispersing bands crossing each other along the nodal line. The sharp high-energy peak is related to transitions between almost parallel bands, and its energy position depends on the interlayer bonding correlated with the c/a ratio, which can be tuned by either chemical or external pressure. For ZrSiTe, another pair of crossing bands appears in the vicinity of the Fermi level, corrugating the nodal-line electronic structure and leading to the observed difference in optical conductivity. The findings suggest that the Dirac physics in ZrXY compounds with X=Si,Ge and Y=S,Se,Te is closely connected to the interlayer bonding. \ 2019 American Physical Society. US.
Original languageEnglish
JournalPhysical Review B
Volume99
Issue number12
DOIs
StatePublished - 2019

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metalloids
pressure effects
conductivity
corrugating
interlayers
dispersing
frequency ranges
diamonds
density functional theory
electronic structure
reflectance
physics
energy
electronics

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@article{5c074b6dddbf44dea158bcc319bb38d1,
title = "Chemical pressure effect on the optical conductivity of the nodal-line semimetals ZrSiY (Y= S,Se,Te) and ZrGeY (Y= S,Te)",
abstract = "ZrSiS is a nodal-line semimetal, whose electronic band structure contains a diamond-shaped line of Dirac nodes. We carried out a comparative study on the optical conductivity of ZrSiS and the related compounds ZrSiSe, ZrSiTe, ZrGeS, and ZrGeTe by reflectivity measurements over a broad frequency range combined with density functional theory calculations. The optical conductivity exhibits a distinct U shape, ending at a sharp peak at around 10000cm-1 for all studied compounds except for ZrSiTe. The U shape of the optical conductivity is due to transitions between the linearly dispersing bands crossing each other along the nodal line. The sharp high-energy peak is related to transitions between almost parallel bands, and its energy position depends on the interlayer bonding correlated with the c/a ratio, which can be tuned by either chemical or external pressure. For ZrSiTe, another pair of crossing bands appears in the vicinity of the Fermi level, corrugating the nodal-line electronic structure and leading to the observed difference in optical conductivity. The findings suggest that the Dirac physics in ZrXY compounds with X=Si,Ge and Y=S,Se,Te is closely connected to the interlayer bonding. \ 2019 American Physical Society. US.",
author = "J. Ebad-Allah and J.F. Afonso and Krottenm M. and J. Hu and Y.L. Zhu and Z.Q. Mao and Kune J. and C.A. Kuntscher",
note = "cited By 0",
year = "2019",
doi = "10.1103/PhysRevB.99.125154",
language = "English",
volume = "99",
journal = "Physical Review B",
issn = "2469-9950",
publisher = "American Physical Society",
number = "12",

}

Chemical pressure effect on the optical conductivity of the nodal-line semimetals ZrSiY (Y= S,Se,Te) and ZrGeY (Y= S,Te). / Ebad-Allah, J.; Afonso, J.F.; M., Krottenm; Hu, J.; Zhu, Y.L.; Mao, Z.Q.; J., Kune; Kuntscher, C.A.

In: Physical Review B, Vol. 99, No. 12, 2019.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Chemical pressure effect on the optical conductivity of the nodal-line semimetals ZrSiY (Y= S,Se,Te) and ZrGeY (Y= S,Te)

AU - Ebad-Allah, J.

AU - Afonso, J.F.

AU - M., Krottenm

AU - Hu, J.

AU - Zhu, Y.L.

AU - Mao, Z.Q.

AU - J., Kune

AU - Kuntscher, C.A.

N1 - cited By 0

PY - 2019

Y1 - 2019

N2 - ZrSiS is a nodal-line semimetal, whose electronic band structure contains a diamond-shaped line of Dirac nodes. We carried out a comparative study on the optical conductivity of ZrSiS and the related compounds ZrSiSe, ZrSiTe, ZrGeS, and ZrGeTe by reflectivity measurements over a broad frequency range combined with density functional theory calculations. The optical conductivity exhibits a distinct U shape, ending at a sharp peak at around 10000cm-1 for all studied compounds except for ZrSiTe. The U shape of the optical conductivity is due to transitions between the linearly dispersing bands crossing each other along the nodal line. The sharp high-energy peak is related to transitions between almost parallel bands, and its energy position depends on the interlayer bonding correlated with the c/a ratio, which can be tuned by either chemical or external pressure. For ZrSiTe, another pair of crossing bands appears in the vicinity of the Fermi level, corrugating the nodal-line electronic structure and leading to the observed difference in optical conductivity. The findings suggest that the Dirac physics in ZrXY compounds with X=Si,Ge and Y=S,Se,Te is closely connected to the interlayer bonding. \ 2019 American Physical Society. US.

AB - ZrSiS is a nodal-line semimetal, whose electronic band structure contains a diamond-shaped line of Dirac nodes. We carried out a comparative study on the optical conductivity of ZrSiS and the related compounds ZrSiSe, ZrSiTe, ZrGeS, and ZrGeTe by reflectivity measurements over a broad frequency range combined with density functional theory calculations. The optical conductivity exhibits a distinct U shape, ending at a sharp peak at around 10000cm-1 for all studied compounds except for ZrSiTe. The U shape of the optical conductivity is due to transitions between the linearly dispersing bands crossing each other along the nodal line. The sharp high-energy peak is related to transitions between almost parallel bands, and its energy position depends on the interlayer bonding correlated with the c/a ratio, which can be tuned by either chemical or external pressure. For ZrSiTe, another pair of crossing bands appears in the vicinity of the Fermi level, corrugating the nodal-line electronic structure and leading to the observed difference in optical conductivity. The findings suggest that the Dirac physics in ZrXY compounds with X=Si,Ge and Y=S,Se,Te is closely connected to the interlayer bonding. \ 2019 American Physical Society. US.

U2 - 10.1103/PhysRevB.99.125154

DO - 10.1103/PhysRevB.99.125154

M3 - Article

VL - 99

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

IS - 12

ER -