Chemical reaction dynamics of F atom reaction with the dimer reconstructed Si {100} (2 × 1) surface

T. A. Schoolcraft; B. J. Garrison

doi:10.1116/1.576538

Chemical reaction dynamics of F atom reaction with the dimer reconstructed Si {100} (2 × 1) surface

T. A. Schoolcraft, B. J. Garrison

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Abstract

We have calculated the initial sticking probability S₀for near thermal atomic fluorine on the clean dimer reconstructed Si{ 100} (2x1) surface to be near unity using molecular dynamics simulations. The dependence of the sticking probability on coverage decreases to approximately zero for the fully fluorinated surface. The sticking probability of an F atom on a fully fluorinated silicon surface increases when the kinetic energy of the fluorine atom is above 0.50 eV.

Original language	English (US)
Pages (from-to)	3496-3501
Number of pages	6
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	8
Issue number	4
DOIs	https://doi.org/10.1116/1.576538
State	Published - Jul 1990

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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title = "Chemical reaction dynamics of F atom reaction with the dimer reconstructed Si {100} (2 × 1) surface",

abstract = "We have calculated the initial sticking probability S0for near thermal atomic fluorine on the clean dimer reconstructed Si{ 100} (2x1) surface to be near unity using molecular dynamics simulations. The dependence of the sticking probability on coverage decreases to approximately zero for the fully fluorinated surface. The sticking probability of an F atom on a fully fluorinated silicon surface increases when the kinetic energy of the fluorine atom is above 0.50 eV.",

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year = "1990",

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AU - Garrison, B. J.

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N2 - We have calculated the initial sticking probability S0for near thermal atomic fluorine on the clean dimer reconstructed Si{ 100} (2x1) surface to be near unity using molecular dynamics simulations. The dependence of the sticking probability on coverage decreases to approximately zero for the fully fluorinated surface. The sticking probability of an F atom on a fully fluorinated silicon surface increases when the kinetic energy of the fluorine atom is above 0.50 eV.

AB - We have calculated the initial sticking probability S0for near thermal atomic fluorine on the clean dimer reconstructed Si{ 100} (2x1) surface to be near unity using molecular dynamics simulations. The dependence of the sticking probability on coverage decreases to approximately zero for the fully fluorinated surface. The sticking probability of an F atom on a fully fluorinated silicon surface increases when the kinetic energy of the fluorine atom is above 0.50 eV.

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Chemical reaction dynamics of F atom reaction with the dimer reconstructed Si {100} (2 × 1) surface

Abstract

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