A chemical solution deposition method is used to prepare calcium copper titanate thin films on platinized silicon substrates. The impact of annealing temperature and stoichiometry on phase formation and dielectric properties is investigated. Through x-ray diffraction analysis, an intermediary phase, identified here as Cu 3TiO 4, is shown to emerge before the crystallization of CaCu 3Ti 4O 12 at 725°C. The temperature at which conversion occurred was mildly dependent on copper stoichiometry. Permittivities between 200 and 400 were observed for all cases; these values are significantly smaller than others reported recently. Field dependent measurements show a voltage variable permittivity which is linked to mobile charges in the CCT crystals and Schottky barriers at both electrode interfaces.
|Original language||English (US)|
|Number of pages||7|
|State||Published - Aug 22 2005|
|Event||106th Annual Meeting of the American Ceramic Society - Indianapolis, IN, United States|
Duration: Apr 18 2004 → Apr 21 2004
All Science Journal Classification (ASJC) codes
- Ceramics and Composites