Chemical stability and surface stoichiometry of vanadium oxide phases studied by reactive molecular dynamics simulations

Byoungseon Jeon, Changhyun Ko, Adri C.T. Van Duin, Shriram Ramanathan

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Compositional stability of various vanadium oxides and oxide growth on vanadium surfaces have been studied using reactive molecular dynamics simulation methods. Vanadium dioxide (VO 2), sesquioxide (V 2O 3), pentoxide (V 2O 5), and hexavanadium tridecaoxide (V 6O 13) are studied in bulk crystalline and thin film structures, investigating charge distribution and pair distribution functions of particle interactions. The stability is estimated to be pentoxide, hexavanadium tridecaoxide, sesquioxide, and dioxide respectively in decreasing order in thin film structures. We then analyze oxide growth kinetics on vanadium (100) and (110) surfaces. The oxidation rate, stoichiometry, charge distribution, and the effect of surface orientation on kinetic phenomena are noted. In the early stages of surface oxidation of our simulation configurations, sesquioxide is found to be the dominant component. The modeling and simulation results are compared with experiments where available.

Original languageEnglish (US)
Pages (from-to)516-522
Number of pages7
JournalSurface Science
Volume606
Issue number3-4
DOIs
StatePublished - Feb 1 2012

Fingerprint

Vanadium
vanadium oxides
Chemical stability
Stoichiometry
Oxides
Molecular dynamics
stoichiometry
vanadium
molecular dynamics
Charge distribution
Computer simulation
dioxides
charge distribution
simulation
Thin films
Oxidation
oxidation
oxides
Particle interactions
Growth kinetics

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

@article{e3617e2a937b40e5a1da4e2a06010255,
title = "Chemical stability and surface stoichiometry of vanadium oxide phases studied by reactive molecular dynamics simulations",
abstract = "Compositional stability of various vanadium oxides and oxide growth on vanadium surfaces have been studied using reactive molecular dynamics simulation methods. Vanadium dioxide (VO 2), sesquioxide (V 2O 3), pentoxide (V 2O 5), and hexavanadium tridecaoxide (V 6O 13) are studied in bulk crystalline and thin film structures, investigating charge distribution and pair distribution functions of particle interactions. The stability is estimated to be pentoxide, hexavanadium tridecaoxide, sesquioxide, and dioxide respectively in decreasing order in thin film structures. We then analyze oxide growth kinetics on vanadium (100) and (110) surfaces. The oxidation rate, stoichiometry, charge distribution, and the effect of surface orientation on kinetic phenomena are noted. In the early stages of surface oxidation of our simulation configurations, sesquioxide is found to be the dominant component. The modeling and simulation results are compared with experiments where available.",
author = "Byoungseon Jeon and Changhyun Ko and {Van Duin}, {Adri C.T.} and Shriram Ramanathan",
year = "2012",
month = "2",
day = "1",
doi = "10.1016/j.susc.2011.11.021",
language = "English (US)",
volume = "606",
pages = "516--522",
journal = "Surface Science",
issn = "0039-6028",
publisher = "Elsevier",
number = "3-4",

}

Chemical stability and surface stoichiometry of vanadium oxide phases studied by reactive molecular dynamics simulations. / Jeon, Byoungseon; Ko, Changhyun; Van Duin, Adri C.T.; Ramanathan, Shriram.

In: Surface Science, Vol. 606, No. 3-4, 01.02.2012, p. 516-522.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Chemical stability and surface stoichiometry of vanadium oxide phases studied by reactive molecular dynamics simulations

AU - Jeon, Byoungseon

AU - Ko, Changhyun

AU - Van Duin, Adri C.T.

AU - Ramanathan, Shriram

PY - 2012/2/1

Y1 - 2012/2/1

N2 - Compositional stability of various vanadium oxides and oxide growth on vanadium surfaces have been studied using reactive molecular dynamics simulation methods. Vanadium dioxide (VO 2), sesquioxide (V 2O 3), pentoxide (V 2O 5), and hexavanadium tridecaoxide (V 6O 13) are studied in bulk crystalline and thin film structures, investigating charge distribution and pair distribution functions of particle interactions. The stability is estimated to be pentoxide, hexavanadium tridecaoxide, sesquioxide, and dioxide respectively in decreasing order in thin film structures. We then analyze oxide growth kinetics on vanadium (100) and (110) surfaces. The oxidation rate, stoichiometry, charge distribution, and the effect of surface orientation on kinetic phenomena are noted. In the early stages of surface oxidation of our simulation configurations, sesquioxide is found to be the dominant component. The modeling and simulation results are compared with experiments where available.

AB - Compositional stability of various vanadium oxides and oxide growth on vanadium surfaces have been studied using reactive molecular dynamics simulation methods. Vanadium dioxide (VO 2), sesquioxide (V 2O 3), pentoxide (V 2O 5), and hexavanadium tridecaoxide (V 6O 13) are studied in bulk crystalline and thin film structures, investigating charge distribution and pair distribution functions of particle interactions. The stability is estimated to be pentoxide, hexavanadium tridecaoxide, sesquioxide, and dioxide respectively in decreasing order in thin film structures. We then analyze oxide growth kinetics on vanadium (100) and (110) surfaces. The oxidation rate, stoichiometry, charge distribution, and the effect of surface orientation on kinetic phenomena are noted. In the early stages of surface oxidation of our simulation configurations, sesquioxide is found to be the dominant component. The modeling and simulation results are compared with experiments where available.

UR - http://www.scopus.com/inward/record.url?scp=84855463379&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84855463379&partnerID=8YFLogxK

U2 - 10.1016/j.susc.2011.11.021

DO - 10.1016/j.susc.2011.11.021

M3 - Article

AN - SCOPUS:84855463379

VL - 606

SP - 516

EP - 522

JO - Surface Science

JF - Surface Science

SN - 0039-6028

IS - 3-4

ER -