Chemically homogeneous complex oxide thin films via improved substrate metallization

Christopher T. Shelton, Paul G. Kotula, Geoff L. Brennecka, Peter G. Lam, Kelsey E. Meyer, Jon-Paul Maria, Brady J. Gibbons, Jon F. Ihlefeld

Research output: Contribution to journalArticle

43 Citations (Scopus)

Abstract

A long-standing challenge to the widespread application of complex oxide thin films is the stable and robust integration of noble metal electrodes, such as platinum, which remains the optimal choice for numerous applications. By considering both work of adhesion and stability against chemical diffusion, it is demonstrated that the use of an improved adhesion layer (namely, ZnO) between the silicon substrate and platinum bottom electrode enables dramatic improvements in the properties of the overlying functional oxide films. Using BaTiO 3 and Pb(Zr,Ti)O 3 films as test cases, it is shown that the use of ZnO as the adhesion layer leads directly to increased process temperature capabilities and dramatic improvements in chemical homogeneity of the films. These result in significant property enhancements (e.g., 300% improvement to bulk-like permittivity for the BaTiO 3 films) of oxide films prepared on Pt/ZnO as compared to the conventional Pt/Ti and Pt/TiO x stacks. A comparison of electrical, structural, and chemical properties that demonstrate the impact of adhesion layer chemistry on the chemical homogeneity of the overlying complex oxide is presented. Collectively, this analysis shows that in addition to the simple need for adhesion, metal-oxide layers between noble metals and silicon can have tremendous chemical impact on the terminal complex oxide layers.

Original languageEnglish (US)
Pages (from-to)2295-2302
Number of pages8
JournalAdvanced Functional Materials
Volume22
Issue number11
DOIs
StatePublished - Jun 6 2012

Fingerprint

Metallizing
Oxide films
adhesion
Adhesion
Thin films
oxides
Oxides
Substrates
thin films
Silicon
Precious metals
Platinum
noble metals
homogeneity
oxide films
platinum
Electrodes
electrodes
Chemical stability
silicon

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Electrochemistry

Cite this

Shelton, C. T., Kotula, P. G., Brennecka, G. L., Lam, P. G., Meyer, K. E., Maria, J-P., ... Ihlefeld, J. F. (2012). Chemically homogeneous complex oxide thin films via improved substrate metallization. Advanced Functional Materials, 22(11), 2295-2302. https://doi.org/10.1002/adfm.201103077
Shelton, Christopher T. ; Kotula, Paul G. ; Brennecka, Geoff L. ; Lam, Peter G. ; Meyer, Kelsey E. ; Maria, Jon-Paul ; Gibbons, Brady J. ; Ihlefeld, Jon F. / Chemically homogeneous complex oxide thin films via improved substrate metallization. In: Advanced Functional Materials. 2012 ; Vol. 22, No. 11. pp. 2295-2302.
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Shelton, CT, Kotula, PG, Brennecka, GL, Lam, PG, Meyer, KE, Maria, J-P, Gibbons, BJ & Ihlefeld, JF 2012, 'Chemically homogeneous complex oxide thin films via improved substrate metallization', Advanced Functional Materials, vol. 22, no. 11, pp. 2295-2302. https://doi.org/10.1002/adfm.201103077

Chemically homogeneous complex oxide thin films via improved substrate metallization. / Shelton, Christopher T.; Kotula, Paul G.; Brennecka, Geoff L.; Lam, Peter G.; Meyer, Kelsey E.; Maria, Jon-Paul; Gibbons, Brady J.; Ihlefeld, Jon F.

In: Advanced Functional Materials, Vol. 22, No. 11, 06.06.2012, p. 2295-2302.

Research output: Contribution to journalArticle

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