Chromium-induced ferromagnetism with perpendicular anisotropy in topological crystalline insulator SnTe (111) thin films

Fei Wang, Hongrui Zhang, Jue Jiang, Yi Fan Zhao, Jia Yu, Wei Liu, Da Li, Moses H.W. Chan, Jirong Sun, Zhidong Zhang, Cui Zu Chang

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Topological crystalline insulator is a recently discovered topological phase of matter. It possesses multiple Dirac surface states, which are protected by the crystal symmetry. This is in contrast to the time-reversal symmetry that is operative in the well-known topological insulators. In the presence of a Zeeman field and/or strain, the multiple Dirac surface states are gapped. The high-Chern-number quantum anomalous Hall (QAH) state is predicted to emerge if the chemical potential resides in all the Zeeman gaps. Here, we use molecular-beam epitaxy to grow 12 double-layer (DL) pure and Cr-doped SnTe (111) thin film on heat-Treated SrTiO3 (111) substrate using a quintuple layer of insulating (Bi0.2Sb0.8)2Te3 topological insulator as a buffer film. The Hall traces of Cr-doped SnTe film at low temperatures display square hysteresis loops indicating long-range ferromagnetic order with perpendicular anisotropy. The Curie temperature of the 12DLSn0.9Cr0.1Te film is ∼110 K. Due to the chemical potential crossing the bulk valence bands, the anomalous Hall resistance of 12DLSn0.9Cr0.1Te film is substantially lower than the predicted quantized value (∼1/4h/e2). It is possible that with systematic tuning the chemical potential via chemical doping and electrical gating, the high-Chern-number QAH state can be realized in the Cr-doped SnTe (111) thin film.

Original languageEnglish (US)
Article number115414
JournalPhysical Review B
Volume97
Issue number11
DOIs
StatePublished - Mar 13 2018

Fingerprint

Ferromagnetism
Chromium
ferromagnetism
chromium
Chemical potential
Anisotropy
insulators
Crystalline materials
Thin films
anisotropy
Surface states
thin films
quantum numbers
Hall resistance
Crystal symmetry
symmetry
Curie temperature
Hysteresis loops
Valence bands
Molecular beam epitaxy

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Wang, Fei ; Zhang, Hongrui ; Jiang, Jue ; Zhao, Yi Fan ; Yu, Jia ; Liu, Wei ; Li, Da ; Chan, Moses H.W. ; Sun, Jirong ; Zhang, Zhidong ; Chang, Cui Zu. / Chromium-induced ferromagnetism with perpendicular anisotropy in topological crystalline insulator SnTe (111) thin films. In: Physical Review B. 2018 ; Vol. 97, No. 11.
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abstract = "Topological crystalline insulator is a recently discovered topological phase of matter. It possesses multiple Dirac surface states, which are protected by the crystal symmetry. This is in contrast to the time-reversal symmetry that is operative in the well-known topological insulators. In the presence of a Zeeman field and/or strain, the multiple Dirac surface states are gapped. The high-Chern-number quantum anomalous Hall (QAH) state is predicted to emerge if the chemical potential resides in all the Zeeman gaps. Here, we use molecular-beam epitaxy to grow 12 double-layer (DL) pure and Cr-doped SnTe (111) thin film on heat-Treated SrTiO3 (111) substrate using a quintuple layer of insulating (Bi0.2Sb0.8)2Te3 topological insulator as a buffer film. The Hall traces of Cr-doped SnTe film at low temperatures display square hysteresis loops indicating long-range ferromagnetic order with perpendicular anisotropy. The Curie temperature of the 12DLSn0.9Cr0.1Te film is ∼110 K. Due to the chemical potential crossing the bulk valence bands, the anomalous Hall resistance of 12DLSn0.9Cr0.1Te film is substantially lower than the predicted quantized value (∼1/4h/e2). It is possible that with systematic tuning the chemical potential via chemical doping and electrical gating, the high-Chern-number QAH state can be realized in the Cr-doped SnTe (111) thin film.",
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Chromium-induced ferromagnetism with perpendicular anisotropy in topological crystalline insulator SnTe (111) thin films. / Wang, Fei; Zhang, Hongrui; Jiang, Jue; Zhao, Yi Fan; Yu, Jia; Liu, Wei; Li, Da; Chan, Moses H.W.; Sun, Jirong; Zhang, Zhidong; Chang, Cui Zu.

In: Physical Review B, Vol. 97, No. 11, 115414, 13.03.2018.

Research output: Contribution to journalArticle

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T1 - Chromium-induced ferromagnetism with perpendicular anisotropy in topological crystalline insulator SnTe (111) thin films

AU - Wang, Fei

AU - Zhang, Hongrui

AU - Jiang, Jue

AU - Zhao, Yi Fan

AU - Yu, Jia

AU - Liu, Wei

AU - Li, Da

AU - Chan, Moses H.W.

AU - Sun, Jirong

AU - Zhang, Zhidong

AU - Chang, Cui Zu

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AB - Topological crystalline insulator is a recently discovered topological phase of matter. It possesses multiple Dirac surface states, which are protected by the crystal symmetry. This is in contrast to the time-reversal symmetry that is operative in the well-known topological insulators. In the presence of a Zeeman field and/or strain, the multiple Dirac surface states are gapped. The high-Chern-number quantum anomalous Hall (QAH) state is predicted to emerge if the chemical potential resides in all the Zeeman gaps. Here, we use molecular-beam epitaxy to grow 12 double-layer (DL) pure and Cr-doped SnTe (111) thin film on heat-Treated SrTiO3 (111) substrate using a quintuple layer of insulating (Bi0.2Sb0.8)2Te3 topological insulator as a buffer film. The Hall traces of Cr-doped SnTe film at low temperatures display square hysteresis loops indicating long-range ferromagnetic order with perpendicular anisotropy. The Curie temperature of the 12DLSn0.9Cr0.1Te film is ∼110 K. Due to the chemical potential crossing the bulk valence bands, the anomalous Hall resistance of 12DLSn0.9Cr0.1Te film is substantially lower than the predicted quantized value (∼1/4h/e2). It is possible that with systematic tuning the chemical potential via chemical doping and electrical gating, the high-Chern-number QAH state can be realized in the Cr-doped SnTe (111) thin film.

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