Chromophore fluorination enhances crystallization and stability of soluble anthradithiophene semiconductors

Sankar Subramanian, Kyu Park Sung, Sean R. Parkin, Vitaly Podzorov, Thomas Nelson Jackson, John E. Anthony

Research output: Contribution to journalArticle

278 Citations (Scopus)

Abstract

We report dramatic improvements in the stability and crystallinity arising from partial fluorination of soluble anthradithiophene derivatives. These fluorinated materials still behave as p-type semiconductors but with dramatic increases in thermal and photostability compared to the non-fluorinated derivatives. The triethylsilyl-substituted material forms highly crystalline films even from spin-cast solutions, leading to devices with maximum hole mobility greater than1.0 cm2/V s. In contrast, the triisopropylsilyl derivative forms large, high-quality crystals that could serve as the substrate for transistor fabrication. For this compound, mobility as high as 0.1 cm2/V s was measured on the free-standing crystal.

Original languageEnglish (US)
Pages (from-to)2706-2707
Number of pages2
JournalJournal of the American Chemical Society
Volume130
Issue number9
DOIs
StatePublished - Mar 5 2008

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Fluorination
Semiconductors
Halogenation
Chromophores
Crystallization
Hot Temperature
Semiconductor materials
Derivatives
Equipment and Supplies
Crystals
Hole mobility
Transistors
Crystalline materials
Fabrication
Substrates
anthradithiophene

All Science Journal Classification (ASJC) codes

  • Catalysis
  • Chemistry(all)
  • Biochemistry
  • Colloid and Surface Chemistry

Cite this

Subramanian, Sankar ; Sung, Kyu Park ; Parkin, Sean R. ; Podzorov, Vitaly ; Jackson, Thomas Nelson ; Anthony, John E. / Chromophore fluorination enhances crystallization and stability of soluble anthradithiophene semiconductors. In: Journal of the American Chemical Society. 2008 ; Vol. 130, No. 9. pp. 2706-2707.
@article{219b28e5bbf244e19e7521d932f67939,
title = "Chromophore fluorination enhances crystallization and stability of soluble anthradithiophene semiconductors",
abstract = "We report dramatic improvements in the stability and crystallinity arising from partial fluorination of soluble anthradithiophene derivatives. These fluorinated materials still behave as p-type semiconductors but with dramatic increases in thermal and photostability compared to the non-fluorinated derivatives. The triethylsilyl-substituted material forms highly crystalline films even from spin-cast solutions, leading to devices with maximum hole mobility greater than1.0 cm2/V s. In contrast, the triisopropylsilyl derivative forms large, high-quality crystals that could serve as the substrate for transistor fabrication. For this compound, mobility as high as 0.1 cm2/V s was measured on the free-standing crystal.",
author = "Sankar Subramanian and Sung, {Kyu Park} and Parkin, {Sean R.} and Vitaly Podzorov and Jackson, {Thomas Nelson} and Anthony, {John E.}",
year = "2008",
month = "3",
day = "5",
doi = "10.1021/ja073235k",
language = "English (US)",
volume = "130",
pages = "2706--2707",
journal = "Journal of the American Chemical Society",
issn = "0002-7863",
publisher = "American Chemical Society",
number = "9",

}

Chromophore fluorination enhances crystallization and stability of soluble anthradithiophene semiconductors. / Subramanian, Sankar; Sung, Kyu Park; Parkin, Sean R.; Podzorov, Vitaly; Jackson, Thomas Nelson; Anthony, John E.

In: Journal of the American Chemical Society, Vol. 130, No. 9, 05.03.2008, p. 2706-2707.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Chromophore fluorination enhances crystallization and stability of soluble anthradithiophene semiconductors

AU - Subramanian, Sankar

AU - Sung, Kyu Park

AU - Parkin, Sean R.

AU - Podzorov, Vitaly

AU - Jackson, Thomas Nelson

AU - Anthony, John E.

PY - 2008/3/5

Y1 - 2008/3/5

N2 - We report dramatic improvements in the stability and crystallinity arising from partial fluorination of soluble anthradithiophene derivatives. These fluorinated materials still behave as p-type semiconductors but with dramatic increases in thermal and photostability compared to the non-fluorinated derivatives. The triethylsilyl-substituted material forms highly crystalline films even from spin-cast solutions, leading to devices with maximum hole mobility greater than1.0 cm2/V s. In contrast, the triisopropylsilyl derivative forms large, high-quality crystals that could serve as the substrate for transistor fabrication. For this compound, mobility as high as 0.1 cm2/V s was measured on the free-standing crystal.

AB - We report dramatic improvements in the stability and crystallinity arising from partial fluorination of soluble anthradithiophene derivatives. These fluorinated materials still behave as p-type semiconductors but with dramatic increases in thermal and photostability compared to the non-fluorinated derivatives. The triethylsilyl-substituted material forms highly crystalline films even from spin-cast solutions, leading to devices with maximum hole mobility greater than1.0 cm2/V s. In contrast, the triisopropylsilyl derivative forms large, high-quality crystals that could serve as the substrate for transistor fabrication. For this compound, mobility as high as 0.1 cm2/V s was measured on the free-standing crystal.

UR - http://www.scopus.com/inward/record.url?scp=40949096935&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=40949096935&partnerID=8YFLogxK

U2 - 10.1021/ja073235k

DO - 10.1021/ja073235k

M3 - Article

VL - 130

SP - 2706

EP - 2707

JO - Journal of the American Chemical Society

JF - Journal of the American Chemical Society

SN - 0002-7863

IS - 9

ER -