We report dramatic improvements in the stability and crystallinity arising from partial fluorination of soluble anthradithiophene derivatives. These fluorinated materials still behave as p-type semiconductors but with dramatic increases in thermal and photostability compared to the non-fluorinated derivatives. The triethylsilyl-substituted material forms highly crystalline films even from spin-cast solutions, leading to devices with maximum hole mobility greater than1.0 cm2/V s. In contrast, the triisopropylsilyl derivative forms large, high-quality crystals that could serve as the substrate for transistor fabrication. For this compound, mobility as high as 0.1 cm2/V s was measured on the free-standing crystal.
All Science Journal Classification (ASJC) codes
- Colloid and Surface Chemistry